Determination of the depth distribution of implanted helium atoms in niobium by Rutherford backscattering

J. Roth,R. Behrisch,B. M. U. Scherzer
DOI: https://doi.org/10.1063/1.1655342
IF: 4
1974-12-01
Applied Physics Letters
Abstract:Using Bragg's rule of additivity of the stopping powers in compounds and the Rutherford backscattering technique to determine electronic stopping powers, the depth distribution of 4-keV helium ions implanted in niobium was determined for different implantation temperatures.
physics, applied
What problem does this paper attempt to address?