Investigation on organic contamination on bond-pad of semiconductor micro-chip by TOF-SIMS

Guoxiang X. Zheng,Yuesheng Li,Xiangfu Zong,Chong Ren,Junyi Luo,Gang Shi
1998-01-01
Abstract:Surface contamination on aluminum bond-pad accelerates corrosion on aluminum semiconductor metallization and causes failure of micro-chip. A lot of work has traced to fluorine containing inorganic contamination caused by plasma processing, few of them focused on organic contamination on bond-pad. TOF-SIMS provided a powerful tool to determine and analyze organic contamination on bond-pad of micro-chip. In the research, we have compared two TOF-SIMS positive spectra have been compared from two bond-pads, one is with contamination spots on bond-pad observed by visual inspection and another is without contamination spots. Based on the TOF-SIMS data, it is supposed that the spots on bond-pad are caused by some organic compounds in the form of CHx and NHy. The fact that organic contamination cause aluminum corrosion has been shown by ion images. After analysis, we the sources of the original organic contamination from the micro-chip processing have been found.
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