Study of laser destruction for optoelectronic device and semiconductor material

Xiaowu Ni,Zhonghua Shen,Jian L��

1997-01-01

Abstract:The present situation, the development and the problems of the research on the high-power laser-produced damages on optoelectronic device and semiconductor material are summarized.

What problem does this paper attempt to address?

Researches on Laser Damage Resistance of Optical Films

Cheng Yong,Lu Yimin,Tang Huang,Guo Yanlong,Huang Guojun,Liu Xu

DOI: https://doi.org/10.11884/hplpb201628.070201

2016-01-01

Abstract:Along with the development of high energy or high power lasers,especially laser weapon and lasers for controlled nuclear fusion,the laser induced damage threshold of the optical films gradually becomes the bottleneck against the development of the lasers,which is of considerable interest from the world.Laser induced damage mechanism of optical films,test flat and method for laser induced damage threshold were expatiated.The development of researches on the technologies and methods for laser damage resistance of optical films at home and abroad,which included ion beam pretreatment,ion beam or anneal treat-ment,pretest coating with the materials of high refractive index and so on,were analyzed.The pulsed laser deposition with mag-netic filter technology was emphasized in the expectation,and the atom layer deposition was advised to accelerate to develop, which supplied the theoretic base to improve the laser damage resistance of optical films to settle for current requirements.
Study on the Laser Induced Damage and the Enhancing Methods for Optical Materials

NI Ya-ru,LU Chun-hua,XU Zhong-zi

DOI: https://doi.org/10.3969/j.issn.0253-2743.2005.05.007

2005-01-01

Abstract:With the fast development and wide application of laser technology.The laser induced damage to optical materials was more and more serious.In this paper,based on the laser induced damage principle,the damage effects,damage mechanisms and damage forms were reviewed.At last,the suggest for improving the laser induced damage thresholds on optical materials was given.
STUDY OF HARD-DESTRUCTIVE MECHANISM OF THE CHARGE-COUPLED DEVICES BY A LASER

Ni Xiao-Wu,Lu Jian,He An-Zhi

DOI: https://doi.org/10.7498/APS.43.1795

IF: 0.906

1994-01-01

Acta Physica Sinica

Abstract:Theoretical and experimental study has been made for the process of hard-des-truction produced by a laser acting upon the surface of charge-coupled devices (CCD) having the MOS structere. It is suggested that the thermal action of laser and the mechanical action of laser plasma shock wave are the main causes for destruction of the structure of the CCD. Optical breakdown threshold, visible damage threshold, thermal melting threshold of semiconductor materials of the CCD device by YAG laser and laser energy threshold caused the whole device to faiture are obtained.
Studies on the thermal damage mechanisms of a PIN junction optoelectronic diode by laser

Jian L��,Xiaowu Ni,Bikai Luo,Anzhi He

1996-01-01

Abstract:The interaction process of a high-power laser and a PIN junction optoelectronic diode has been studied theoretically and experimentally. It has been put forward that the thermal effect of the laser beam and the eroding and washing effect induced when the laser plasmas expand out result in the damage of the silicon photodiode. The thermal distribution and an expression of the maximum temperature as well as the corresponding experimental results have been obtained when the Q-switched Nd:YAG laser irradiates upon the PIN junction optoelectronic diode.
Thermal Destruction Mechanisms of PIN-junction Optoelectronic Diode by Laser

XW NI,J LU

DOI: https://doi.org/10.1117/12.218643

1995-01-01

Abstract:The interaction process of a high-power laser and a PIN-junction optoelectronic diode has been studied theoretically and experimentally. It has been put forward that the thermal effect of laser beams and the eroding and washing effect while the laser plasmas expand out, results in the silicon photodiode to be damaged. The thermal distribution, the expression of the maximum temperature, have been obtained for the first time when a Q-switched Nd:YAG laser irradiated upon the PIN junction optoelectronic diode.
Damage Performance and Developments of Final Optics System for UV Nanosecond High Power Laser Systems

Mingying Sun,Zhaoyang Jiao,Yajing Guo,Chong Liu,Rong Wu,Lei Ren,Ping Shao,Jianqiang Zhu,Zunqi Lin

DOI: https://doi.org/10.1117/12.2500358

2018-01-01

Abstract:UV laser damage is still the key issue of high power nanosecond laser systems. The operation performance of the final optics in SGII-UP facility is first reviewed. Based on a high power laser prototype, laser-induced damage of large aperture final optics at 351nm was experimentally studied, including damage initiation, growth and morphologies. The near filed of 351nm laser beam was precisely measured with a high resolution by using the precision diagnostics system (PDS) to study the effects of laser modulation and propagation on laser damage. The damage behaviors were comprehensively analyzed and the main contributors to laser damage were discussed. The development perspective of final optics system for high power laser system is briefly introduced.
Laser-Induced Damage Initiation and Growth of Optical Materials

Jingxia Yu,Xia Xiang,Shaobo He,Xiaodong Yuan,Wanguo Zheng,Haibing Lü,Xiaotao Zu

DOI: https://doi.org/10.1155/2014/364627

2014-01-01

Advances in Condensed Matter Physics

Abstract:The lifetime of optical components is determined by the combination of laser-induced damage initiation probability and damage propagation rate during subsequent laser shots. This paper reviews both theoretical and experimental investigations on laser-induced damage initiation and growth at the surface of optics. The damage mechanism is generally considered as thermal absorption and electron avalanche, which play dominant roles for the different laser pulse durations. The typical damage morphology in the surface of components observed in experiments is also closely related to the damage mechanism. The damage crater in thermal absorption process, which can be estimated by thermal diffusion model, is typical distortion, melting, and ablation debris often with an elevated rim caused by melted material flow and resolidification. However, damage initiated by electron avalanche is often accompanied by generation of plasma, crush, and fracture, which can be explained by thermal explosion model. Damage growth at rear surface of components is extremely severe which can be explained by several models, such as fireball growth, impact crater, brittle fracture, and electric field enhancement. All the physical effects are not independent but mutually coupling. Developing theoretical models of multiphysics coupling are an important trend for future theoretical research. Meanwhile, more attention should be paid to integrated analysis both in theory and experiment.
Complicated Morphologies and Instructive Mechanism of Laser-Induced Bulk Damage in Transparent Materials

Xingqiao Fu,Kainan Zhou,Guoying Feng,Jinghua Han,Na Xie,Guorui Zhou,Wei Li

DOI: https://doi.org/10.1088/1612-202x/ac22b3

IF: 1.704

2021-01-01

Laser Physics Letters

Abstract:Laser-induced bulk impurity damage has always been a difficult issue in optical systems, affecting the signal-to-noise ratio, beam quality, and other vital laser parameters. In this study, the generation mechanism of bulk damage morphology is demonstrated through a combination of experiment and theory. The growth mechanism is then represented through parameter control. Finally, a general conclusion of bulk damage generation is obtained alongside a reasonable control range of dangerous parameters. The damage area is described comprehensively, and the guiding conclusions of dangerous parameters are given, providing theoretical support for precision optics processing, high-power laser design and other projects.
Experimental Study On Cmos And Materials Irradiated By Hundred-Picosecond Pulse Laser With High Repetition Rate

Kaixuan Wang,Pingxue Li,Xuyang Yu,Chuanfei Yao,Tingting Wang,Xiang'E Han

DOI: https://doi.org/10.1117/12.2574189

2020-01-01

Abstract:The imaging systems are widespread observation tools used in the national defense, industry and a number of aspects in science and technology. The CMOS image sensors which serve as the core part of optical imaging systems and detecting systems, are highly susceptible to laser interference and destruction. Therefore, it is of great theoretical and practical significance to study the damage characteristics of CMOS image sensor. There are many researches on the damage phenomena of CMOS image sensors irradiated by continuous laser, ns-laser, ms-laser and fs-laser, but the damage effects of CMOS irradiated by the hundred picoseconds fiber laser are few investigated. In this work, we used an all-fiber MOPA ps-pulsed laser system which generates pulse width of 226.5 ps and average power of 20 W with high beam quality and pulse stability to irradiate the CMOS at repetition rate of 9.6 MHz and 2.4 MHz. The experimental results showed that with the increase of laser power density, the phenomena of over saturation effect, saturated crosstalk effect, black line damage and black lines semi-cross damage appeared at different repetition rates. And the measured threshold and damage mechanism of CMOS were studied. Besides, based on the hydrodynamics theory, the laser-induced plasma density and temperature distribution of various materials (aluminum, copper and silicon) irradiated by the ps-laser were simulated, which provide a theoretical basis for the interaction of metals and semiconductors by the hundred picoseconds fiber laser.
Study on Damage Mechanism of Semiconductor Saturable Absorber Mirror

ZHANG Jing

DOI: https://doi.org/10.3969/j.issn.1672-9870.2011.04.006

2011-01-01

Abstract:With the development of ultrafast laser to high power and high pulse energy,it is necessary to study damage mechanism of semiconductor saturable absorber mirror(SESAM) and high threshold SESAM.Damage mechanism of SESAM in high power ultrafast laser is theoretically analyzed and experimentally observed in this paper.The damage mechanism on surface of SESAM is studied by heat imaging of SESAM in working high power ultrafast laser with thermal imager and the SESAM surface damaged by high power femtosecond laser pulses is also analyzed.Both heat damage of SESAM and the influential factors are studied in this paper.
Thermal and Mechanical Breakage Induced by High Power Laser on Optical and Photoelectric Elements

NIU Yanxiong,ZHANG Shulian,YAO Jianquan,HUANG Feng

2007-01-01

Laser & Optoelectronics Progress

Abstract:Thermal and mechanical breakage is the key factor of laser damage on optical and photoelectric elements. The thermal-mechanical model of optical materials, optical and photoelectric elements induced by high power laser is set up based on laser-material interaction mechanism, and the transient temperature field distribution and thermal stress field induced by laser are analyzed through resolving the heat conduction equation. The numerical simulation and experimental research of laser induced thermal and mechanical breakage on K9 glass, diamond-like carbon films, glue lens and HgCdTe detector are carried out.
Laser Damage Performance Study of Fundamental Frequency Dielectric Film Optical Elements

Zixuan Chen,Ye Tian,Jingguo Zhu,Laixi Sun,Fang Wang,Yizhang Ai,Hongjie Liu,Xuewei Deng,Mingjun Chen,Jian Cheng,Linjie Zhao

DOI: https://doi.org/10.3390/cryst13040571

IF: 2.7

2023-01-01

Crystals

Abstract:In laser application systems, the optical film is one of the most important parts of the system, as well as its weakest link. Its damage performance determines the output characteristics and safety performance of the laser system. This paper focuses on the fundamental frequency reflection of dielectric films used in large high-powered laser devices. The study of the dielectric film’s initial laser damage performance and laser damage growth performance is carried out through laser damage testing and microscopic morphology testing of the damage. The results show two different damage morphologies: type 1 damage (film discoloration damage) and type 2 damage (cratered damage), and the damage growth behavior between the two is very different, with type 1 damage not growing and type 2 damage growing rapidly under subsequent episodes that trigger their damage fluxes. The difference in the growth behavior is well explained by the micro-zone surface shape of the damage location. The results of this paper help to deepen the understanding of the dielectric membrane element processing process and the damage growth behavior.
Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

Yue Song,Zhiyong Lv,Jiaming Bai,Shen Niu,Zibo Wu,Li Qin,Yongyi Chen,Lei Liang,Yuxin Lei,Peng Jia,Xiaonan Shan,Lijun Wang

DOI: https://doi.org/10.3390/cryst12060765

IF: 2.7

2022-05-27

Crystals

Abstract:High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.

materials science, multidisciplinary,crystallography
Reliability of the High Power Laser Diodes

王乐,刘云,吴东江,王立军

DOI: https://doi.org/10.3969/j.issn.1671-5896.2003.03.002

2003-01-01

Abstract:In measuring the \%P\|I\% and \%I\|V\% characteristics of semiconductor LDs(Laser Diodes),some devices fail suddenly.By SEM(Scaning Electron Microscopy),the melting region in facet of these devices is observed,which confirms that the failed devices are caused by DLD(Dark Line Defect) and COD(Catastrophic Optical Damage).From the expreimental results and theroy analysis,the factors which cause devices degrade may be the imperfects of material,structure or process,and the electrical surge will aceelerate the degradation.The methods for decreasing device degradation,such as insulation and nonalsorbing mirrors,are presented.
Research on Particulate Contamination Induced Laser Damage of Optical Material Based on Integrated Spectroscopy

Kun-yan Ding,Chang-tao He,Zhi-gang Liu,Jing Xiao,Guo-ying Feng,Kai-nan Zhou,No Xie,Jing-hua Han

DOI: https://doi.org/10.3964/j.issn.1000-0593(2023)04-1234-08

2023-01-01

Spectroscopy and spectral analysis

Abstract:K9 glass is widely used in of high-power lasers because of its high hardness, good thermal stability, low expansion coefficient and high transmittance. However, the problem of contaminant-induced damage to optical components has become one of the bottlenecks restricting the development of high-power lasers. The in-depth study of the damage mechanism of optical components is important to control the damage formation. In order to investigate the damage mechanism, the spectral detection analysis method is proposed, and the mechanism of Al2O3-induced laser damage in K9 glass is studied by this method. In this method, the EDS spectroscopy techniques were used to investigate the damage morphology and the corresponding changes in the atomic percentages of elements before and after the damage. The physical and ablation chemical changes that occurred during the damage process can be explored. In addition, the ionization process during the damage is diagnosed and discussed combined with LIPS technology. The investigation of the damage principle of optical elements and the real-time monitoring of the safety of optical elements are realized. The results show that during the laser-induced contaminant damage, the morphology of Al2O3 particle changes and micro damage crater also appeared in the K9 glass. In addition, the atomic percentage content of Al2O3 particles changes due to the deformation of the particles, the Na2O contained in the K9 substrate combines with oxygen, causing an increase of the atomic percentage content of O elements, and SiO2 changes into ultrafine particles through the vaporizationcondensation process, which leads to a decrease in the atomic percentage of Si elements. These changes directly reflect the hightemperature melting phenomenon during the damage process. The ionization breakdown process can be detected using LIBS, and the characteristics of a plasma flash in the damage process are obtained. Furthermore, the physical processesmentioned above were modeled and simulated, and the heat conduction during the damage process and the plasma shock wave propagation characteristics within the substrate were analyzed using COMSOL simulations. It is shown that during the damage process, the particle temperature reaches 2 800 K, which is higher than its melting point (2 313 K) and similarly, the substrate temperature (2 500 K) is also higher than its melting point (1 673 K), which directly causes a phase transition and generates a plasma under subsequent laser irradiation. The high-pressure impact of the plasma causes the appearance of micro melt damage craters on the substrate. The simulation analysis verifies the feasibility and accuracy of the LIBS technology and EDS spectral analysis to investigate the damage mechanism of optical components, which can be used not only for the analysis of the damage mechanism but also for the real-time monitoring of the stable operation of high-power laser systems.
Progress in research on the interaction mechanism of high-power laser and materials

Jian L��,Xiaowu Ni,Anzhi He

1996-01-01

Abstract:The present situation and problems in physical mechanism research of the interaction between high power laser and materials were reviewed. The theoretical and experimental works by the authors were emphasized, and the research work which should be continued in this direction was pointed out.
Laser-induced Damages to Charge Coupled Devices with Combined Nanosecond/picosecond Short-Pulse Lasers

He Cao,Xiaofan Xie,Hao Chang,Yunfei Li,Jianfeng Yue,Yu,Gong Wang,Ziqi Tang,Lifang Li,Yulei Wang,Zhiwei Lu

DOI: https://doi.org/10.3389/fphy.2024.1345859

IF: 3.718

2024-01-01

Frontiers in Physics

Abstract:The research on laser induced breakdown mechanism of charge coupled devices (CCDs) brings new insights into photoelectric countermeasures. So far combined laser irradiation has been proved to be a more effective measure to destroy CCD. Due to the limitation of short-pulse laser combination method, the mechanism of CCD damage caused by combined short-pulse laser remains unexplored. Here, the distribution of temperature and stress field during the interaction between a combined short-pulse laser and a CCD is analyzed. A nanosecond/picosecond combined short-pulse laser system based on Stimulated Brillouin Scattering (SBS) pulse compression technique is designed. The damage threshold (DT) and properties of CCD by combined laser irradiation are characterized. The results show that the complete DT of combined laser induced CCD breakdown is only 103 mJ/cm2, which is only 44% of that of picosecond laser. The main cause of combined short-pulse laser induced CCD breakdown is short circuit (SC) between silicon substrate and silicon electrode.
Study of thermal and mechanical damage in optical material induced by high-power laser

赵建君,宋春荣,牛燕雄

DOI: https://doi.org/10.3969/j.issn.0253-2743.2005.01.013

2005-01-01

Abstract:In this paper,a physical mold of optical material irradiated by high-power laser is established.The distributions of temperature and stress profiles are studied by the use of a 3-D model of heat conduction by CW laser.The relationship of the max thermal stress and time is presented with Gauss beam.The results point out that the conception of thermal diffusion length is not adapted to the 3-D model and the damage threshold of material is studied by the fitting curve of the material parameters.At last,study shows that the theoretical mold is in accord with experiment.
Study on static electric shoke failure of GaAs based high power laser

Xin-zhu HUANG,Bi-feng CUI,Wei-ling GUO,Sha LI,Zhen-zhen KONG,Tian-xiao FANG,Shuai HAO

DOI: https://doi.org/10.3969/j.issn.1001-5078.2017.06.009

2017-01-01

Abstract:In order to determine the static damage of high power semiconductor laser,the static damage mechanism of high power semiconductor laser is studied.Firstly,the biases of-200,-600,-800,-1200 and +5000 V electrostatic discharge (ESD) were applied to GaAs-based high power laser diodes.The electrical and optical parameters of HPLD were measured after electrostatic discharge stressing.Secondly,the damage of the device was observed by using a microscope after etching the device.After applying reverse ESD,the I-V curve of the semiconductor laser had a obvious soft breakdown phenomenon and the optical output power decreased obviously.The reverse leakage current of-1200 V ESD device is 5883854.92 times of that with no ESD when it was working in 4 V.After applying forward ESD,the device has no obvious soft breakdown phenomenon,and the power drop is very small.After applying reverse ESD and etching gold electrode,device surface had obvious phenomenon of meltdown,while device surface hadn′t this phenomenon after applying forward ESD.Due to the different I-V characteristics and damage characterization between reserve ESD and forward ESD,it is inferred that the I-V characteristics of the device has no obvious change after applying the forward high instantaneous voltage and current.But the reverse high instantaneous voltage and current will lead to an obvious soft breakdown of I-V curve and meltdown phenomenon of device surface.This provides an effective criterion for the electrostatic damage.
Review: Research Progress on Nanosecond Laser Irradiation Damage of Optical Films

Yuling Wu,Xia Xiang,Jingxia Yu,Xiaodong Yuan,Huahai Shen,Wanguo Zheng,Xiaotao Zu

DOI: https://doi.org/10.1016/j.nucana.2022.100045

2022-01-01

Nuclear Analysis

Abstract:Nanosecond laser irradiation damage of optical films is one of the main factors to limit the output power when the high power solid laser system is used to drive inertial confinement nuclear fusion. In this review, taking SiO2 and HfO2 antireflection films as examples, the physical mechanisms of nanosecond laser irradiation damage of optical films were summarized from two aspects, i.e., numerical simulation studies and experimental investigations, including thermal melting damage, stress damage and plasma damage during irradiation. Based on the current research and difficulties in the field of irradiation damage of optical films, a brief outlook is given here, which may be helpful to improve the output power and operation stability of laser fusion devices in the future.

Study of laser destruction for optoelectronic device and semiconductor material

Researches on Laser Damage Resistance of Optical Films

Study on the Laser Induced Damage and the Enhancing Methods for Optical Materials

STUDY OF HARD-DESTRUCTIVE MECHANISM OF THE CHARGE-COUPLED DEVICES BY A LASER

Studies on the thermal damage mechanisms of a PIN junction optoelectronic diode by laser

Thermal Destruction Mechanisms of PIN-junction Optoelectronic Diode by Laser

Damage Performance and Developments of Final Optics System for UV Nanosecond High Power Laser Systems

Laser-Induced Damage Initiation and Growth of Optical Materials

Complicated Morphologies and Instructive Mechanism of Laser-Induced Bulk Damage in Transparent Materials

Experimental Study On Cmos And Materials Irradiated By Hundred-Picosecond Pulse Laser With High Repetition Rate

Study on Damage Mechanism of Semiconductor Saturable Absorber Mirror

Thermal and Mechanical Breakage Induced by High Power Laser on Optical and Photoelectric Elements

Laser Damage Performance Study of Fundamental Frequency Dielectric Film Optical Elements

Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

Reliability of the High Power Laser Diodes

Research on Particulate Contamination Induced Laser Damage of Optical Material Based on Integrated Spectroscopy

Progress in research on the interaction mechanism of high-power laser and materials

Laser-induced Damages to Charge Coupled Devices with Combined Nanosecond/picosecond Short-Pulse Lasers

Study of thermal and mechanical damage in optical material induced by high-power laser

Study on static electric shoke failure of GaAs based high power laser

Review: Research Progress on Nanosecond Laser Irradiation Damage of Optical Films