Abstract:Although ultrafast laser materials processing has advanced at a breakneck pace over the last two decades, most applications have been developed with laser pulses at near-IR or visible wavelengths. Recent progress in mid-infrared (MIR) femtosecond laser source development may create novel capabilities for material processing. This is because, at high intensities required for such processing, wavelength tuning to longer wavelengths opens the pathway to a special regime of laser-solid interactions. Under these conditions, due to the ${\lambda}^2$ scaling, the ponderomotive energy of laser-driven electrons may significantly exceed photon energy, band gap and electron affinity and can dominantly drive absorption, resulting in a paradigm shift in the traditional concepts of ultrafast laser-solid interactions. Irreversible high-intensity ultrafast MIR laser-solid interactions are of primary interest in this connection, but they have not been systematically studied so far. To address this fundamental gap, we performed a detailed experimental investigation of high-intensity ultrafast modifications of silicon by single femtosecond MIR pulses (${\lambda}$ = 2.7 - 4.2 ${\mu}$m). Ultrafast melting, interaction with silicon-oxide surface layer, and ablation of the oxide and crystal surfaces were ex-situ characterized by scanning electron, atomic-force, and transmission electron microscopy combined with focused ion-beam milling, electron diffractometry, and ${\mu}$-Raman spectroscopy. Laser induced damage and ablation (LIDA) thresholds were measured as functions of laser wavelength. The traditional theoretical models did not reproduce the wavelength scaling of the damage thresholds. To address the disagreement, we discuss possible novel pathways of energy deposition driven by the ponderomotive energy and field effects characteristic of the MIR wavelength regime.

Study on Damage Mechanism of Semiconductor Saturable Absorber Mirror

Measurement of Damage Threshold of Semiconductor Saturable-Absorber Mirrors

Researches on Laser Damage Resistance of Optical Films

High Damage Threshold Semiconductor Saturable Absorber Mirror for Fiber Lasers

Research on Semiconductor Saturable Absorption Mirror Used for High Frequency Ultrashort Pulse Lasers

Optical characteristics of semiconductor saturable absorber mirrors investigated by the reflection Z-scan technique

Analysis and Calculation on Semiconductor Saturable-absorber mirror

Ultrafast damage dynamics and ablation mechanism of GaSe induced by femtosecond laser irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Contrastive Study on Two Kinds of Semiconductor Saturable Absorber Mirrors for Side-Pumped Passively Mode-Locked Nd:YAG Lasers

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Semiconductor Saturable Absorber Mirror Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers

Ultrafast Laser Material Damage Simulation—A New Look at an Old Problem

Time-domain dynamic electric field distribution of low-oscillation sculptured structure dispersive mirrors

Research on High Power Laser Damage Resistant Optically Addressable Spatial Light Modulator

SiO2 passivated TaS2 saturable absorber mirrors for the ultrafast pulse generation

Periodic Adjustment of the Position of A Laser Beam Spot on A Semiconductor Saturable Absorber Mirror in A Passively Mode-Locked Solid-State Laser

Single-Shot Multi-Stage Damage and Ablation of Silicon by Femtosecond Mid-infrared Laser Pulses

Dynamics of Femtosecond Laser Pulse Induced Damage in Multilayers

Application of Semiconductor Saturable Absorption Mirrors to Pulse Laser Range Finding

Broadband Semiconductor Saturable-Absorber Mirror for a Self-Starting Mode-Locked Cr:forsterite Laser.