Dependence Of Film Resistance On Fractal Formation Of Au/A-Ge Bilayer Films

ShuYuan Zhang,Zhiwen Chen,MingLiang Tian,Shun Tan,Boquan Li,Jingsheng Zhu,Yuheng Zhang,张庶元,陈志文,田明亮,谭舜,李伯泉,朱警生,张裕恒

1996-01-01

Chinese Science Bulletin

Abstract:null

What problem does this paper attempt to address?

Dependence of Fractal Formation on Thickness Ratio and Annealing Time in Au/Ge Bilayer Films

Zhiwen Chen,Shun Tan,Shuyuan Zhang,Jianguo Hou,Ziqin Wu,Hisashi Sekine

DOI: https://doi.org/10.1143/JJAP.40.3960

2001-01-01

Abstract:The dependence of the fractal formation on the thickness ratio and the annealing time in Au/Ge bilayer films has been investigated by transmission electron microscopy. The experimental evidence indicates that the polycrystalline Ge fractal clusters with various sizes. density. and fractal dimension are formed after crystallization of amorphous Ge. It is found that the fractal formation is sensitively dependent on the thickness ratio of Au and Ge. The random successive nucleation mechanism can be used to explain the behavior of the fractal formation.
Fractal Description of Surface Topography of Ultrathin Au Films

LV Jian-guo,SONG Xue-ping,SUN Zhao-qi

2010-01-01

Abstract:Surface topography of ultrathin Au films with different thicknesses,prepared by direct current magnetron sputtering technique,was analyzed by atomic force microscopy.Power spectral density was used to calculate fractal dimension of the ultrathin Au films.The results show that as sputtering time increases,the fractal dimension of Au films decreases from 2.579 to 2.500 in high frequency region,and that of Au films increase from 2.607 to 2.819 in low frequency region.The surface topography of Au films has multi-scale feature.Multifractal spectra show that the spectrum width α of Au films changes from 0.051 to 0.118,indicating that surface roughness of Au films increases with increasing sputtering time.The f of samples are positive,suggesting that the number of highest peak sites greater than that of lowest valley sites.
Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films

Chen Zhiwen,Zhang Shuyuan,Tan Shun,Tian Mingliang,Hou Jianguo,Zhang Yuheng

DOI: https://doi.org/10.1016/S0040-6090(97)00907-3

IF: 2.1

1998-01-01

Thin Solid Films

Abstract:The fractal crystallization of the Au/a-Ge bilayer films has been investigated, and the resistance characteristics have been first measured by the two-probe configuration method. The experimental results suggest that the resistance R of various annealing films are influenced by the fractal formation and the fractal dimension. These phenomena were explained by the Random Tunnelling Junction Network (RTJN) model. (C) 1998 Elsevier Science S.A. All rights reserved.
Multifractal Behavior of Crystallization on Au/Ge Bilayer Films

ZW Chen,XP Wang,S Tan,SY Zhang,JG Hou,ZQ Wu

DOI: https://doi.org/10.1103/physrevb.63.165413

2001-01-01

Abstract:The relationship between the distribution and the dimension of fractal patterns in annealed Au/Ge bilayer films has been investigated. The variation of the single-fractal branch width can be shown by using a simple fractal dimension. The nonuniform distribution of multiple-fractal patterns can be described quantitatively by using the multifractal spectra. It has been demonstrated that, when the fractals are fewer, they exhibit the greater nonuniform distribution and the multifractal spectrum is wider. We found that a few fractal patterns distribute nonuniformly in film annealed at 100 degreesC for 60 min, and that many fractal patterns distribute uniformly in whole film annealed at 120 degreesC for 60 min. Correspondingly, the width Delta alpha of multifractal spectra decreases from 3.70 to 0.23.
Fractal Crystallization And Nonlinear V-I Behavior Of Au/Ge Bilayer Film

Zhiwen Chen,ShuYuan Zhang,Shun Tan,Jianguo Hou,Yuheng Zhang,Hisashi Sekine

DOI: https://doi.org/10.1063/1.1326851

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:The fractal formation and V-I behavior of the Au/Ge bilayer film have been investigated with a transmission electron microscope and by the two-probe configuration method. The experimental results suggest that the Au/Ge bilayer film, after the fractal crystallization, shows a nonlinear V-I behavior. This phenomenon was explained by the random tunneling junction model. (C) 2001 American Institute of Physics.
Study of grey level threshold selection of TEM images of Au-MgF2 cluster film

Jian-guo L(U),Jie-lin DAI,Xue-ping SONG,Zhao-qi SUN

DOI: https://doi.org/10.3969/j.issn.1000-6281.2007.03.005

2007-01-01

Abstract:Topography of the Au-MgF_2 composite films,deposited by RF magnetron sputtering,was characterized with transmission electron microscopy(TEM).We carried out the image binary by using the gray average method and the Boltzmann fit parameters method,and characterize the distribution of Au clusters by using fractal theory.The results shows that as Au volume fraction varying from 6.0% to 49.0%,fractal dimension increases from 1.8510 to 1.8688 for the gray average method,however,increases from 1.669 to 1.941 for the Boltzmann fit parameters method.Fractal dimension of the two methods can characterize the relation between size and distribution of Au clusters and Au volume fraction.But that of Boltzmann fit parameters method also be able to discriminate the dissimilarity of Au cluster films.
Study on Multifractal Spectrum of Semicontinuous Ag Films

SUN Zhao-qi,LU Jian-guo,GAO Qing-wei

DOI: https://doi.org/10.3969/j.issn.1000-6281.2006.01.006

2006-01-01

Abstract:The topography of semicontinuous Ag films with thickness from 1.5nm to 67nm deposited by DC magnetron sputtering was measured with a transmission electron microscope(TEM).We quantitatively charactered inhomogeneous surface distribution and size distribution of Ag islands by means of multifractal theory.Multifractal spectra f(α)～α show that the spectrum width Δα increased with increasing the thickness at first,and decreased later.It indicates that the inhomogeneous surface distribution of Ag islands also increased at first,and decreased later.Size distribution of Ag islands transited from Ag islands of minimum volume playing important roles to Ag islands of maximum volume playing important roles when the thickness of thin film was beyond a certain critical value(between 12nm and 67nm).
Experimental observation and simulation of fractal patterns of Au/Ge bilayer films

Z.W. Chen,S.Y. Zhang,S. Tan,J.G. Hou,Z.Q. Wu

DOI: https://doi.org/10.1007/s003390201288

2003-01-01

Applied Physics A

Abstract:. In this paper, we report on the simulation of fractal clusters and the comparison with experimental fractal patterns. We found that multiple fractal clusters can be formed in Au/Ge bilayer films for different annealing times. The fractal crystallization area increases with the increase in the annealing time. The random successive nucleation model can simulate the actual growth processes of multiple growth sites. The simulating fractal clusters are in good agreement with our experimental fractal patterns.
Temperature dependence of resistivity of random metallic film deposited on fractal substrate

Gaoxiang Ye,Xiangming Tao,Yuqing qing Xu,Hongliang Ge,QiRui Zhang

1997-01-01

Abstract:The anomalous temperature dependence of the resistivity of bilateral rough random Au and Pt metallic films deposited on the fracture surfaces of ��-Al2O3 ceramics was studied. In the temperature interval of 12-200 K, the fractal structure of substrate affects the temperature dependence of the resistivity obviously if the film resistance is higher than the order of 103��. The anomalous phenomenon is resulted from both the electron-electron interaction and the weak localization effect in the film.
Multifractal Study of Atomic Force Microscopic Images of Al-doped ZnO Thin Films

吕建国,宋学萍,孙兆奇

DOI: https://doi.org/10.3969/j.issn.1000-6281.2008.03.004

2008-01-01

Abstract:Surface topography of Al-doped ZnO(AZO) thin films prepared by sol-gel process was measured with atomic force microscopic.The atomic force microscopic images of Al-doped ZnO thin films were studied by means of multifractal theory. Multifractal spectra were used to characterize the surface roughness of the thin film quantitatively.The results show that rms roughness of the AZO thin film with the Al doping concentration 0.5 at.% annealed at 550 ℃ was 1.817 but that with the Al doping concentration 1.0 at.% annealed at 600 ℃ was 4.625,the width of multifractal spectrum Δα increased from 0.019 to 0.287,the Δf changed from-0.075 to 0.124,respectively.
Effect of grain boundary network on pattern formation in a-Ge/Au bilayer films

Hou Jianguo,Wu Ziqin,A L Vasilev,N A Kiselev

DOI: https://doi.org/10.1088/0256-307X/7/8/006

1990-01-01

Chinese Physics Letters

Abstract:The a-Ge/p-Au bilayer thin films with different Au grain sizes were prepared. After annealing, different patterns of Ge appeared in the film morphology. It is found that the fractal dimensions of the patterns are highly dependent on the grain size of Au, and the experimental results indicate that the fractal formation in such system is truly dominated by the local latent temperature field.
Nonlinear V-I characteristic in fractal crystallization of Au/a-Ge bilayer film

Shuyuan Zhang,Zhiwen Chen,Shun Tan,MingLiang Tian,Yuheng Zhang

1997-01-01

Abstract:The fractal crystallization phenomenon of the Au/a-Ge bilayer film has been investigated, and the V-I characteristic of the film has been measured for the first time. The experimental evidence suggests that the Au/a-Ge film after fractal crystallization has anomalous nonlinear V-I characteristic. The phenomenon is explained by the Random Tunneling Junction Network mode (RTJN mode).
In Situ Tem Study Of Fractal Formation In Amorphous Ge/Au Bilayer Films

Shuyuan Zhang,Xiaoping Wang,Zhiwen Chen,Ziqin Wu,N. Jin-Phillipp,M. Kelsch,F. Phillipp

DOI: https://doi.org/10.1103/PhysRevB.60.5904

IF: 3.7

1999-01-01

Physical Review B

Abstract:The kinetic behavior of fractal crystallization in amorphous semiconductor/metal bilayer films has been studied by in situ transmission electron microscopy. The fractal growth process exhibits three stages: rapid growth, steady growth, and slow growth. During the initial rapid growth stage, the fractal crystallization is controlled by both diffusion and reaction processes. With increasing annealing time, fractal growth is obstructed and becomes slower because more and more other fractal patterns approach from the neighborhood. The growth kinetics analysis indicates that both diffusion-limited aggregation and random successive nucleation mechanisms play an important role in fractal crystallization in the amorphous Ge/Au films. [S0163-1829(99)05031-6].
Fringe Effect on Critical Current of a Gold Film Percolation System

HL Ge,YW Zeng,CM Feng,GX Ye,QR Zhang

DOI: https://doi.org/10.1088/1004-423x/6/7/008

1997-01-01

Abstract:In this paper, the fringe effect on critical current has been studied systematically by measuring tie electric transport characteristics of a Au-film system with diffuse fringe structure, It is found experimentally that, when the fringe effect becomes obvious, the film will exhibit strange I-R characteristics, in which exist a balance current and a critical current. We find that the critical exponents are related to the diffuse fringe structure of the films. The detailed analysis shows that the characteristics result from the thermionic-activating conductive effect in the diffuse fringe film system.
Experimental Demonstration Of Fractal Shape Transition And Fractal Size In Ge Clusters Formation

Zw Chen,S Tan,Sy Zhang,Jg Hou

DOI: https://doi.org/10.1142/S0217979202009597

2002-01-01

International Journal of Modern Physics B

Abstract:The nucleation and growth of Ge fractal clusters in Au/Ge bilayer films have been investigated by transmission electron microscope (TEM). It is found that the fractal crystallization, the fractal shape transition, and the fractal size strongly depend on the annealing time and the films thickness ratio. The fractal formation can be explained by a random successive nucleation and growth (RSNG) model. The fractal shape transition and fractal size may be determined by the relative ratio between the propagation rate of RSN process and the grain growth rate.
Fractal Characteristics of Film Surface

Xm Tang,Sz Wei,Zs Mao,Hy Li,Xf Chen,Ym Zheng

DOI: https://doi.org/10.3866/pku.whxb19990504

1999-01-01

Acta Physico-Chimica Sinica

Abstract:A fractal surface was generated on computer by random addition method, The simulated measurement on this surface shows that z resolution has little effect on calculating fractal dimension D while the lower a y resolution causes larger statistic error. D was calculated for Au films on three kind of substrate using data from Scanning Tunneling Microscope(STM) images. D=2.15 for Au/ceramic, and D = 2.06 for Au/optical glass, D has different values for different points on Au/general glass, the reason of mismatch between curves from STM images of different scan sizes was also discussed.
Effect of Fractal Crystallization on the Depositing Sequence of A Pd/Ge Thin Film System

ZW Chen,SY Zhang,S Tan,JG Hou,YH Zhang

DOI: https://doi.org/10.1116/1.581343

1998-01-01

Abstract:The behavior of fractal crystallization in a Pd/Ge thin film system of various ratios of thickness (or composition) after annealing has been investigated by transmission electron microscope. It is difficult for coevaporated Pd–Ge films to obtain fractal crystallization. The fractal structure in Pd/a-Ge bilayer films can form more easily than in a-Ge/Pd bilayer films. The fractal crystallization was restricted because of the formation of the compounds (Pd2Ge and PdGe) in the Pd/Ge thin film system. Growth of the fractal structure depends on the competition between the two processes of amorphous germanium (a-Ge) crystallization and compound formation. Fractal formation can be explained by a random successive nucleation model.
Fractal Structure Appeared in Ion-Implanted A-Ge/ag Bilayer Films after Annealing

Hou Jianguo,Wu Ziqin

DOI: https://doi.org/10.1088/0256-307x/5/10/004

1988-01-01

Chinese Physics Letters

Abstract:The agglomeration in ion-implanted a-Ge/Ag bilayer films has been investigated by use of transmission electron microscopy (TEM). There are two kinds of fractal structures, one of which is soot-like with fractal dimension (FD) of 1.515, the other is snow-flake-like with FD of 1.797. The result is compared with that of the unimplanted film, and the mechanism of the occurrence of fractal regions is also discussed.
Insights into Fractal Feature Evolution from Au/Ge Thin Films after Annealing

Z.W. Chen,S.Y. Zhang,S. Tan,J.G. Hou,Z.Q. Wu

DOI: https://doi.org/10.1007/s00339-003-2164-y

2004-01-01

Applied Physics A

Abstract:We report a perplexing behavior of fractal shape transition that results from a change in the annealing temperature and time or the film thickness ratio. We find that a compact-to-open fractal shape transition can be induced by increasing the annealing temperature and time or decreasing the thickness ratio of the Au and Ge films. This behavior is not completely consistent with what is predicted by theories based on diffusion-limited aggregation and previous experimental observations. In this new system, we find that fractal shape transitions are truly dominated by the random-successive nucleation and growth mechanism.
Multifractal analysis of the spatial distribution of the film surfaces with different roughening mechanisms

J. Hou,Wang Yan,Xia Rui,Zhu Xiaoguang,Wang Haiqian,Z. Wu

DOI: https://doi.org/10.1103/PhysRevE.58.2213

IF: 2.707

1998-01-01

Physical Review E

Abstract:Thin films of C-60/Ag were prepared by codeposition of C-60 and Ag onto (001) NaCl substrates. The surface roughness depends strongly on the substrate temperature, and a transition from kinetically roughening to thermally roughening was observed by using atomic force microscopy. Multifractal spectra of the film surfaces have been studied in the length scale of 30 nm to 5 mu m. Compared with the conventional root-mean-square method, the multifractal spectrum provides more information about the spatial distribution of the surface roughness.

Dependence Of Film Resistance On Fractal Formation Of Au/A-Ge Bilayer Films

Dependence of Fractal Formation on Thickness Ratio and Annealing Time in Au/Ge Bilayer Films

Fractal Description of Surface Topography of Ultrathin Au Films

Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films

Multifractal Behavior of Crystallization on Au/Ge Bilayer Films

Fractal Crystallization And Nonlinear V-I Behavior Of Au/Ge Bilayer Film

Study of grey level threshold selection of TEM images of Au-MgF2 cluster film

Study on Multifractal Spectrum of Semicontinuous Ag Films

Experimental observation and simulation of fractal patterns of Au/Ge bilayer films

Temperature dependence of resistivity of random metallic film deposited on fractal substrate

Multifractal Study of Atomic Force Microscopic Images of Al-doped ZnO Thin Films

Effect of grain boundary network on pattern formation in a-Ge/Au bilayer films

Nonlinear V-I characteristic in fractal crystallization of Au/a-Ge bilayer film

In Situ Tem Study Of Fractal Formation In Amorphous Ge/Au Bilayer Films

Fringe Effect on Critical Current of a Gold Film Percolation System

Experimental Demonstration Of Fractal Shape Transition And Fractal Size In Ge Clusters Formation

Fractal Characteristics of Film Surface

Effect of Fractal Crystallization on the Depositing Sequence of A Pd/Ge Thin Film System

Fractal Structure Appeared in Ion-Implanted A-Ge/ag Bilayer Films after Annealing

Insights into Fractal Feature Evolution from Au/Ge Thin Films after Annealing

Multifractal analysis of the spatial distribution of the film surfaces with different roughening mechanisms