Abstract:Bismuth pyrochlore ceramics have modest temperature coefficients of capacitance, good microwave properties, and can be prepared at relatively modest temperatures (~900 - 1100 °C). This work focuses on the preparation and characterization of thin films in this family for the first time. A sol-gel procedure using bismuth acetate in acetic acid and pyridine, in combination with zinc acetate dihydrate and niobium ethoxide in 2-methoxyethanol was developed. The solution chemistry was adjusted to prepare (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 and Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 films. Solutions were spin-coated onto platinized Si substrates and crystallized by rapid thermal annealing. In both cases, crystallization occurred by 550 °C into the cubic pyrochlore structure. (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 films remained in the cubic phase up to crystallization temperatures of 750 °C, while the structure of the Bi 2 (Zn 1/3 Nb 2/3 ) 2 O 7 thin films is dependent of the firing temperature: cubic below 650 °C and orthorhombic above 750 °C. A mixture of cubic and orthorhombic structures is found at 700 °C. The resulting BZN films are dense, uniform, and smooth (rms roughness of < 5 nm). Cubic bismuth zinc niobate films show dielectric constants up to 150, a negative temperature coefficient of capacitance, TCC, (~ - 400 ppm/°C), tan δ < 0.01, and a field tunable dielectric constant. Orthorhombic films showed smaller dielectric constants (~80), low tan δ (< 0.01), positive TCC, and field independent dielectric constants. TCC could be adjusted to new 0 ppm/°C using a mixture of orthorhombic and cubic material.

Preparation, Structure And Dielectric Properties Of Bismuth-Based Ceramic Dielectrics

Chemical Synthesis of Cubic Bismuth Zinc Niobate Ceramic and Its Dielectric Properties

DIELECTRIC PROPERTIES OF BISMUTH ZINC NIOBATE CERAMICS

Dielectric properties of Pb(Zn1/3Nb2/3)O3-based ceramics with Bi2O3K2O dopants

Synthesis, Structure and Dielectric Properties of Bi2O3-ZnO-CaO-Nb2O5ceramics

Low Temperature Microwave Properties of Bismuth Based Dielectric Ceramics

Dielectric Properties Of Pb(Zn1/3nb2/3)O-3-Batio3-Pbtio3 Ceramics

Preparation, Characterization and Dielectric Properties of Ba3M0.33Ta4.67O15 (m=zn, Ni) Ceramics

Phase Structure and Dielectric Properties of Bi2O3‐ZnO‐Nb2O5‐Based Dielectric Ceramics

Study of structure and dielectrc properties of non-stoichiometric Bi 2 O 3 -ZnO-Nb 2 O 5 ceramics

Structures, Phase Transformations, and Dielectric Properties of Pyrochlores Containing Bismuth

Dielectric Properties of Pb(Zn/sub 1/3/nb/sub 2/3/)o/sub 3/-Batio/sub 3/-Pbtio/sub 3/ Ceramics

Dielectric properties of cubic bismuth based pyrochlores containing lithium and fluorine

Bismuth Pyrochlore Films for Dielectric Applications

Structures and Electric Properties of Cubic Bismuth Based Pyrochlore Thin Films Grown by Pulsed Laser Deposition

Dielectric and Ferroelectric Properties of (Bixba1−x)(znx/2ti1−x/2)o3ceramics

The low temperature dielectric anomaly of bismuth-based ceramics

Microstructures and Dielectric Properties of (na0.5bi0.5)0.775ba0.225ti0.775sn0.225o3 Relaxor Ferroelectric with Bi2O3–B2O3–ZnO Glass Addition

Structures and Dielectric Properties of Pyrochlore Bismuth Zinc Niobate Thin Films with Zinc Compensation

Dielectric Properties of Fe<sup>3+</sup> Doped Bi<sub>1.5</sub>ZnNb<sub>1.5</sub>O<sub>7</sub> Ceramics

Low Temperature Sintering and Dielectric Properties of BaTi_(0.75)Zr_(0.25)O_3 Ceramic