Abstract:The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.

C-V Characteristics of Sio2 Thin Films Prepared by Sol-Gel Method

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS

Preparation of SiOF Low Dielectric Constant Thin Film by Sol-gel Process

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

C-V characteristics of ferroelectric thin film systems with MF(I)S structures on Si

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

MOS Capacitor Characteristics of 3C-Sic Films Deposited on Si Substrates at 1270°C

An interesting phenomenon in the C-V measurements of nanocrystal based MOS capacitor

Mechanical Characteristics of Sio2 Electrets

Structural and Electrical Characterization of Porous Silicon Carbide Formed in n-6H-SiC Substrates

Physical investigations of vanadium oxide thin films on p-Si substrate

C-V Characteristics of Metal-Polysilane-Silicon Structures

Dielectric properties and optical propagation loss of c-axis oriented ZnO thin films deposited by sol-gel process

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

High Frequency Capacitance–voltage Characterization of Al2O3/ZrO2/Al2O3 in Fully Depleted Silicon-on-insulator Metal–oxide–semiconductor Capacitors

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

An amorphous SiCOF film with low dielectric constant prepared by plasma-enhanced chemical vapor deposition