Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Properties of plasma-deposited amorphous SiO2 films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Electrical, optical, and structural characteristics of Al2O3 thin films prepared by pulsed ultrasonic sprayed pyrolysis

Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Electrical Properties of Al2O3 Gate Dielectrics

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Electronic properties of ZrO<sub>2</sub> films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering

Preparation of α- Al2 O3 thin films by electron cyclotron resonance plasma-assisted pulsed laser deposition and heat annealing

I-V and C-V Properties of TiO 2 Thin Film by Pulsed-Laser Reactive Deposition

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Preparation Of Alpha-Al2o3 Thin Films By Electron Cyclotron Resonance Plasma-Assisted Pulsed Laser Deposition And Heat Annealing