ZnCdSe/ZnSe superlattice grown by MBE

Hai Ye,Yunliang Chen,Hailong Wang

1996-01-01

Abstract:We have successfully grown Zn1-xCdx/ZnSe superlattices by MBE, and have measured different samples with SIMS and AES. We have gained the elements distribution in this kind of material for the first time. The results show a good elements longitudinal distribution in ZnCdSe/ZnSe superlattices.

What problem does this paper attempt to address?

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Caixia Jin,Zhen Ling,Donghong Wang,Gencai Yu,Jie Wang,Daming Huang,Xiaoyuan Hou,Xiaoliang Shen,Wenhua Yao

1997-01-01

Abstract:High quality Zn1-xMnxSe/ZnSe strained-layer superlattices are grown by molecular beam epitaxy on GaAs(100) substrates and characterized by X-ray diffraction and Raman scattering. For the case of a Zn1-xMnxSe/ZnSe superlattice with a larger thickness than a critical thickness, we show that it can be treated as free-standing with ZnSe under biaxial tension and Zn1-xMnxSe under biaxial compression, while the frequency shifts of LO phonons are observed both in ZnSe well layer and Zn1-xMnxSe barrier layer. For the case where the total thickness of a Zn1-xMnxSe/ZnSe superlattice is well bellow the critical thickness, the structure grows pseudomorphically to the buffer layer. In this case, the ZnSe well layers are not strained and Zn1-xMnxSe is under biaxial compressive strain. No shift of Raman frequency is observed in Raman spectrum. The frequency shifts of LO phonons due to the lattice mismatch between the continuous layers are calculated, showing a good agreement with that of theoretical calculations.
Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Qingliang Feng,Yiming Zhu,Jinhua Hong,Mei Zhang,Wenjie Duan,Nannan Mao,Juanxia Wu,Hua Xu,Fengliang Dong,Fang Lin,Chuanhong Jin,Chunming Wang,Jin Zhang,Liming Xie

DOI: https://doi.org/10.1002/adma.201306095

2014-01-01

Abstract:Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).
Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Caixia Jin,Xianghua Shi,Lian Ke,Baoping Zhang,Zhen Ling,Gengcai Yu,Jie Wang,Xiaoyuan Hou

1998-01-01

Abstract:Zn1-xMnxSe/ZnSe strained-layer superlattices are grown by molecular beam epitaxy on GaAs (100) substrates and characterized by X-ray diffraction and low temperature photoluminescence. The main emission peaks in photoluminescence spectra can be attributed to the free exciton between the lowest electron subband and ground light hole subband of the ZnSe well. The energy shifts due to the strain and quantum confinement are calculated on the basis of deformation potential theory and Bastard's method, showing good agreement with the experimental results.
Growth and Optical Characterization of Diluted Magnetic Semiconductor Zn1−xMnxSe/ZnSe Strained-Layer Superlattices

CX Jin,BP Zhang,Z Ling,J Wang,XY Hou,Y Segawa,X Wang

DOI: https://doi.org/10.1063/1.364958

IF: 2.877

1997-01-01

Journal of Applied Physics

Abstract:Zn 1−x Mn x Se/ZnSe strained-layer superlattices are grown by molecular beam epitaxy on GaAs(100) substrates and characterized by x-ray diffraction and low temperature photoluminescence. For the case where the total thickness of a Zn1−xMnxSe/ZnSe superlattice is well below the critical value, the structure grows pseudomorphically to the buffer layer. A blue shift of 6 meV of the excitonic peak is observed and has been explained by the carrier confinement effect only. For the case of a Zn1−xMnxSe/ZnSe superlattice with a thickness larger than its critical values, we show that it can be treated as free-standing with ZnSe under tension and Zn1−xMnxSe under compression. The strain present can overwhelm the quantum confinement to produce a net red shift of 2 meV of the near band-edge feature. The energy shifts due to the strain and quantum confinement are calculated on the basis of deformation potential theory and Bastard’s method, showing good agreement with the experimental results.
Molecular beam epitaxial growth and characterization of ZnTe and ZnTe-CdTe superlattice

Jie Li,Li He,Nanchang Zhu,Pudong Lao,Shixin Yuan

DOI: https://doi.org/10.1016/0022-0248(92)90687-E

IF: 1.8

1992-01-01

Journal of Crystal Growth

Abstract:Molecular beam epitaxial (MBE) growth of ZnTe and ZnTe-CdTe superlattice on GaAs(100) substrates was investigated by reflection high energy electron diffraction. Optimal growth parameters were proposed. Characterization of ZnTe film and ZnTe-CdTe superlattices was performed using X-ray diffraction, photoluminescence and Raman scattering. It was found that although growth conditions play an important role, the main condition for achieving a high-quality CdTe-ZnTe superlattice is to avoid the generation of misfit dislocations.
MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

Li He,Jianguo Zhong,Jie Li,Jian Lu,Zhonglin Pong,Meifang Yu,Jinbi Yu,Qinxi Xie,Shixin Yuan

DOI: https://doi.org/10.1016/0022-0248(90)90954-J

IF: 1.8

1990-01-01

Journal of Crystal Growth

Abstract:The experimental results of molecular-beam epitaxy of (111) CdTe epilayers on Zn-stabilized and Se-stabilized (100) ZnSe/(100) GaAs are presented. The results show unambiguously that an A or B face of (111) CdTe can be selectively obtained by growing on the Se-stabilized or the Zn-stabilized (100) ZnSe. The results suggest that the present (111)B CdTe/(100) ZnSe/(100) GaAs structure would be superior to the (111) CdTe/(100) GaAs system for the subsequent growth of Hg1−xCdxTe.
Study on GSMBE growth of InGaAs/InP superlattice materials

Dianzhao Sun,Xiaoliang Wang,Xiaobing Li,Hongxi Guo,Chunhui Yan,Jianping Li,Shirong Zhu,Lingxiao Li,Yiping Zen,Meiying Kong,Xun Hou

1995-01-01

Abstract:This paper reports growth of InGaAs/InP nonstrained and strained layer superlattices with 40 periods on (100) InP substrates by GSMBE method using the first China-made CBE system. The samples have been characterized by high-resolution X-ray diffractometer, and In composition in the InGaAs well layer has been calculated. The results show that the superlattices have a high quality.
Structural and optical properties of Zn1− xMgxSe alloys grown on GaAs(0 0 1) substrates by molecular beam epitaxy

Darning Huang,Xingjun Wang,Yanfeng, Wei,Xiaohan Liu,Lie Wang,Xun Wang,Zhanghai Chen,Wei Lü

DOI: https://doi.org/10.1016/s0022-0248(98)80227-3

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:Abstract The Zn1−xMgxSe alloys for x up to 0.72 have been grown on GaAs(0 0 1) substrates by molecular beam epitaxy. For Zn-rich samples, the pure zincblende (0 0 1) structure is obtained. For Mg-rich films, however, both (1 1 1) and (0 0 1) domains coexist with the former having a lower x value as compared to the latter. Despite its very low content, the (1 1 1) domain has a profound contribution to the optical spectra, suggesting that the (1 1 1) structure is more stable and has higher crystal quality in the Mg-rich films when grown on GaAs(0 0 1) substrates. The measured infrared reflection and photoluminescence spectra can only be understood well when the different structural phases in the films are properly considered.
Molecular beam epitaxial growth and characterization of ZnMgSSe on GaAs

Changsheng Zhu,Gencai Yu,Liangyao Chen,Jie Wang,Xun Wang

1995-01-01

Abstract:A new kind of II-IV wide band-gap Zn1-xMgxSySe1-y films was grown on GaAs (100) substrates by molecular beam epitaxy. Changing the growth conditions, the film can be grown within 0��x��1, 0��y��1. The Mg and S compositions of the films were measured by Auger electron spectroscopy. The structural characteristics of the films were studied by X-ray diffraction, and the experimental results show that the films are zinc-blende structure at any Mg and S contents. The band-gap energies and the refractive indices of ZnMgSSe alloys were studied by ellipsometry method at room temperature. We have found that the refractive index n of ZnMgSSe decreases as Eg increases. The experimental results also show that band-gap energy can be varied from 2.8 to 3.6eV, maintaining lattice-matching to a GaAs(100) substrate at proper proportion of Mg and S compositions.
The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Jie Cui,Hailong Wang,Fuxi Gan

DOI: https://doi.org/10.1016/0022-0248(92)90802-P

IF: 1.8

1992-01-01

Journal of Crystal Growth

Abstract:The optical and spectroscopic properties, such as refractive indices, transient luminescences, and Raman spectra, of ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices grown by molecular beam epitaxy were studied.
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Deren Yang,Y. J. Shin,C. H. Lee,Youn-Jeong CHOI,Peng Yu

1997-01-01

Abstract:An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is , which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about , at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.
Structure study of Zn1-xMgxSe films grown on GaAs(100) substrates

Yanfeng, Wei,Daming Huang,Donghong Wang,Caixia Jin,Jie Wang,Xiaoliang Shen

1997-01-01

Abstract:The Zn1-xMgxSe ternary alloys with x from 0 to 1 were grown on GaAs (100) substrates by molecular beam epitaxy. X-ray diffraction and Raman spectra were measured to study their crystal structure. For the samples with low alloy composition x, the films have the crystal structure of zinc blend (100). The other phases such as zinc blend (111) are negligible. For the samples with x-0.5, both zinc blend (100) and (111) structures are found, as shown in X-ray diffraction and Raman spectra. The above two phases, however, show different alloy composition x. The fraction of (111) phase is estimated to be the maximum for the films with x(100)-0.6. For the sample with x=1, i.e., the MgSe film, the crystal structure is the pure rocksalt. The experimental results suggest that the zinc blend (111) is the intermediate structure between zinc blend (100) and rocksalt (100).
The Growth and Characteristics of In2Se3/(Bi1−xInx)2Se3 Superlattices with Asymmetric Graded Interfaces by Molecular Beam Epitaxy

Chaofan Xu,Xibo Yin,Jing He,Junye Li,Haining Ji,Jianwei Wang,Handong Li,Xiaobin Niu,Zhiming Wang

DOI: https://doi.org/10.1063/5.0010447

IF: 4

2020-01-01

Applied Physics Letters

Abstract:The growth of In2Se3/Bi2Se3 superlattices (SLs) by molecular beam epitaxy at an elevated temperature is explored. The crystalline phase structure of In2Se3 layers in the as-grown SLs is determined to be α-In2Se3. The diffusion of In from In2Se3 to Bi2Se3 is significantly promoted, while Bi diffusion into In2Se3 layers is insignificant as manifested by the in situ lattice evolution analysis, so that the achieved SL structure is of graded (Bi1−xInx)2Se3 solid-solution layers periodically separated by α-In2Se3 layers. The lattice vibration characteristics due to phonon confinement in the achieved SLs are also exhibited.
Structural And Optical Properties Of Zn(1-X)Mg(X)Se Alloys Grown On Gaas(001) Substrates By Molecular Beam Epitaxy

Daming Huang,Xingjun Wang,Yanfeng Wei,Xiaohan Liu,Jie Wang,Xun Wang,Zhanghai Chen,Wei Lu

DOI: https://doi.org/10.1016/S0022-0248(98)80227-3

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:The Zn(1-x)Mg(x)Se alloys for x up to 0.72 have been grown on GaAs(0 0 1) substrates by molecular beam epitaxy. For Zn-rich samples, the pure zincblende (0 0 1) structure is obtained. For Mg-rich films, however, both (1 1 1) and (0 0 1) domains coexist with the former having a lower x value as compared to the latter. Despite its very low content, the (1 1 1) domain has a profound contribution to the optical spectra, suggesting that the (1 1 1) structure is more stable and has higher crystal quality in the Mg-rich films when grown on GaAs(0 0 1) substrates. The measured infrared reflection and photoluminescence spectra can only be understood well when the different structural phases in the films are properly considered. (C) 1998 Elsevier Science B.V. All rights reserved.
Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

Shanshan Liu,Xiang Yuan,Peng Wang,Zhi-Gang Chen,Lei Tang,Enze Zhang,Cheng Zhang,Yanwen Liu,Weiyi Wang,Cong Liu,Chen,Jin Zou,Weida Hu,Faxian Xiu

DOI: https://doi.org/10.1021/acsnano.5b03796

IF: 17.1

2015-01-01

ACS Nano

Abstract:Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1-x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p-n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1-x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research.
Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Z. Y. Wang,X. Guo,H. D. Li,T. L. Wong,N. Wang,M. H. Xie

DOI: https://doi.org/10.1063/1.3610971

2011-06-03

Abstract:Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.

Mesoscale and Nanoscale Physics,Materials Science
Crystal Structure and Raman Scattering in Zn1−xMgxSe Alloys

DM HUANG,CX JIN,DH WANG,XH LIU,J WANG,X WANG

DOI: https://doi.org/10.1063/1.115334

IF: 4

1995-01-01

Applied Physics Letters

Abstract:Zn1−xMgxSe alloys have been grown on (100) GaAs substrates by molecular beam epitaxy. Their crystal structures are determined form x-ray diffraction spectra and are found to be zinc blende, rocksalt, and their mixture for x<0.5, x=1, and x∼0.6, respectively. The Raman spectra are measured and show two-mode behavior for those alloys with zinc blende structure. The long-wavelength frequencies of ZnSe- and MgSe-like optical phonons are determined and the results can be expressed as linear functions of x. The first-order Raman spectra are observed for MgSe and Mg-rich Zn1−xMgxSe alloys with rocksalt structure. Those Raman spectra are attributed to the scattering from optical phonons activated by disorders and impurities, and their line shapes represent the phonon density of states.
Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Zongjian Fan,Krishna Yaddanapudi,Ryan Bunk,Subhash Mahajan,Jerry M. Woodall

DOI: https://doi.org/10.1063/5.0008780

2020-05-20

Abstract:Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The nature of ZnSe/GaAs interface under different surface terminations of GaAs was examined. The ZnSe/Ga-terminated GaAs was found to have a superior optical and microstructural quality, with a chemical interface consisting of a mixture of both the GaAs and ZnSe atomic constituents. For GaAs/ZnSe interface studies, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was used to grow GaAs layers under the conditions compatible to the growth of ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation Zn$_3$As$_2$ compound. The correlation between the observed optical as well as structural properties of both the (GaAs/ZnSe and ZnSe/GaAs) interfaces and the growth conditions used in this study are discussed in detail. This study could provide a valuable insight on the interface nature of ZnSe-GaAs HS.

Materials Science
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

Ming-Wei Chen,HoKwon Kim,Dmitry Ovchinnikov,Agnieszka Kuc,Thomas Heine,Olivier Renault,Andras Kis

DOI: https://doi.org/10.1038/s41699-017-0047-x

IF: 10.516

2018-01-25

npj 2D Materials and Applications

Abstract:Atomically thin GaSe has been predicted to have a non-parabolic, Mexican hat-like valence band structure due to the shift of the valence band maximum (VBM) near the Γ point which is expected to give rise to novel, unique properties such as tunable magnetism, high effective mass suppressing direct tunneling in scaled transistors, and an improved thermoelectric figure of merit. However, the synthesis of atomically thin GaSe remains challenging. Here, we report on the growth of atomically thin GaSe by molecular beam epitaxy (MBE) and demonstrate the high quality of the resulting van der Waals epitaxial films. The full valence band structure of nominal bilayer GaSe is revealed by photoemission electron momentum microscopy (k-PEEM), confirming the presence of a distorted valence band near the Γ point. Our results open the way to demonstrating interesting new physical phenomena based on MBE-grown GaSe films and atomically thin monochalcogenides in general.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

ZnCdSe/ZnSe superlattice grown by MBE

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Growth and Optical Characterization of Diluted Magnetic Semiconductor Zn1−xMnxSe/ZnSe Strained-Layer Superlattices

Molecular beam epitaxial growth and characterization of ZnTe and ZnTe-CdTe superlattice

MBE growth of (111) CdTe on Zn-stabilized and Se-stabilized (100) ZnSe

Study on GSMBE growth of InGaAs/InP superlattice materials

Structural and optical properties of Zn1− xMgxSe alloys grown on GaAs(0 0 1) substrates by molecular beam epitaxy

Molecular beam epitaxial growth and characterization of ZnMgSSe on GaAs

The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Optical properties of Ge/Si quantum dot superlattices

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Structure study of Zn1-xMgxSe films grown on GaAs(100) substrates

The Growth and Characteristics of In2Se3/(Bi1−xInx)2Se3 Superlattices with Asymmetric Graded Interfaces by Molecular Beam Epitaxy

Structural And Optical Properties Of Zn(1-X)Mg(X)Se Alloys Grown On Gaas(001) Substrates By Molecular Beam Epitaxy

Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Crystal Structure and Raman Scattering in Zn1−xMgxSe Alloys

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion