Negative Differential Mobility and Convective Instability of A Semiconductor Superlattice

XL Lei,NJM Horing,HL Cui
DOI: https://doi.org/10.1088/0953-8984/7/50/015
1996-01-01
Abstract:A fully three-dimensional analysis of the convective instability of a planar superlattice biased in the regime of negative differential miniband conductance is carried out for the first time with accurate microscopic treatment of phonon and impurity scatterings. For a typical GaAs-based superlattice having period d = 10 nm, miniband width Delta = 900 K and electron sheet density N-s = 1.5 x 10(15) m(-2), we find that the convective space-charge waves propagate at a phase velocity ranging from 0.75 nu(o) to 0.95 nu(o) (nu(o) is the carrier drift velocity) and with an amplitude growth rate only about a few per cent of that predicted by the conventional drift-diffusion model and other existing methods.
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