Abstract:The photoresponse characteristics of separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiodes (APDs) were investigated in detail. The p-i-n-i-n avalanche photodiodes were examined using the newly designed model of avalanche photodiodes in AlGaN. The research results showed that the dark current density was about 3.51 × 10−8 A/cm2, the light current density was 5.86 × 10−5 A/cm2 under near-zero bias, and the avalanche breakdown occurred at about 135.0 V under reverse bias, which were all consistent with the experimental data. To investigate the effects influencing the photoresponse characteristics of the APDs, their photo responsivity spectra under different biases were simulated. The APD featured a window region over the wavelength range from 260 to 280 nm with a high rejection ratio on the short-wavelength side. Meanwhile, the dependence of APD responsivity on the polarization charge revealed that the negative polarization charges strongly affected the responsivity. Increased negative polarization charges at the Al0.4Ga0.6N/Al0.6Ga0.4N interface markedly lowered the responsivity, whereas charges of the same polarity at the GaN/Al0.4Ga0.6N interface enhanced the responsivity. Furthermore, the dependence of responsivity on p-type doping was analyzed by comparison with the effects of negative polarization charges on the conduction band of the APDs. Finally, the inversion layer models are used to interpret the effects of these on the APD responsivity. This research is useful for exploring polarization and p-type doping effects in SAM AlGaN structures and realization of high responsivity solar-blind APDs.

Influences of Polarization Effect and P-Region Doping Concentration on the Photocurrent Response of Solar-Blind P-I-N Avalanche Photodiodes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Polarization and P-Type Doping Effects on Photoresponse of Separate Absorption and Multiplication AlGaN Solar-Blind Avalanche Photodiodes

Effect of Polarization Field on the Photocurrent Characteristics of GaN/AlN Multi-Quantum-Well Avalanche Photodiode

Electro-optical Characteristics for AlGaN Solar-Blind P-I-n Photodiode: Experiment and Simulation

Exploitation of Polarization in Back-Illuminated Algan Avalanche Photodiodes

Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Influence of Temperature and Reverse Bias on Photocurrent Spectrum and Supra-Bandgap Spectral Response of Monolithic GaInP/GaAs Double-Junction Solar Cell

Performance Comparison of Front- and Back-Illuminated Modes of the Algan-Based P-I-N Solar-Blind Ultraviolet Photodetectors

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

A Study on the Spectral Response of Back-Illuminated P-I-n AlGaN Heterojunction Ultraviolet Photodetector

Capacitance Characteristics of Back-Illuminated Al0.42Ga0.58N∕Al0.40Ga0.60N Heterojunction P-I-n Solar-Blind UV Photodiode

Distribution of Electric Field and Design of Devices in Gan Avalanche Photodiodes

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Dependence of Ingan Solar Cell Performance on Polarization-Induced Electric Field and Carrier Lifetime

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Polarization Enhanced GaN Avalanche Photodiodes with P-Type In0.05Ga0.95N Layer

Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC Avalanche Photodiodes

Investigation of back-illuminated AlGaN avalanche photodiodes with p-type graded Al_xGa_1-xN layer