Abstract:The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer rich prospects for their integration in artificial neural networks. The resistive states are classified as either non-volatile or volatile, and switching occurs when the material properties are triggered by an external stimulus such as temperature, current, voltage, or electric field. The non-volatile resistance state change is typically achieved by the switching layer’s local redox reaction that involves both electronic and ionic movement. In contrast, a volatile change in the resistance state arises due to the transition of the switching layer from an insulator to a metal. Here, we demonstrate volatile resistive switching in twinned LaAlO 3 onto which strained thin films of La 0.67 Sr 0.33 MnO 3 (LSMO) are deposited. An electric current induces phase transition that triggers resistive switching, close to the competing phase transition temperature in LSMO, enabled by the strong correlation between the electronic and magnetic ground states, intrinsic to such materials. This phase transition, characterized by an abrupt resistance change, is typical of a metallic to insulating behavior, due to Joule heating, and manifested as a sharp increase in the voltage with accompanying hysteresis. Our results show that such Joule heating-induced hysteretic resistive switching exhibits different profiles that depend on the substrate texture along the current path, providing an interesting direction toward new multifunctional in-memory computing devices.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Reversible insulator-metal transition of LaAlO 3 /SrTiO 3 interface for nonvolatile memory

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Reversible Metal-Insulator Transition in LaAlO3thin Films Mediated by Intragap Defects: an Alternative Mechanism for Resistive Switching

Reversible insulator-metal transition of LaAlO₃/SrTiO₃ interface for nonvolatile memory.

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Electric Field-Induced Coexistence of Nonvolatile Resistive and Magnetization Switching in Pt/NiO/Nb:SrTiO3 Heterostructure

Resistive Switching Behavior of Ag/La0.67Sr0.33MnO3/Pt Heterostructures

Voltage-Controlled Bistable Resistive Switching Behavior Based On Ni0.5zn0.5fe2o4/Bifeo3/Nb:Srtio3 Heterostructures

Colossal resistive switching behavior and its physical mechanism of Pt/ p -NiO/ n -Mg 0.6 Zn 0.4 O/Pt thin films

Polarization-induced Resistive Switching Behaviors in Complex Oxide Heterostructures

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Oxide Heterostructure Resistive Memory.

Resistance Switching Effect in LaAlO 3 /Nb-Doped SrTiO 3 Heterostructure

Sub-band Transport Mechanism and Switching Properties for Resistive Switching Nonvolatile Memories with Structure of Silver/aluminum Oxide/p-Type Silicon

Non–volatile Resistance Switching Properties of PbTiO3 Based Metal–ferroelectric–semiconductor Structures

Electrochemically driven dual bipolar resistive switching in LaNiO<sub>3</sub>/SmNiO<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterostructures fabricated through selective area epitaxy

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory