Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan,Dennis Valbjørn Christensen,Yu Zhang,Hongrui Zhang,Krishnan Dileep,Zhicheng Zhong,Wei Niu,Damon James Carrad,Kion Norrman,Merlin von Soosten,Thomas sand Jespersen,Baogen Shen,Nicolas Gauquelin,Johan Verbeeck,Jirong Sun,Nini Pryds,Yunzhong Chen
DOI: https://doi.org/10.48550/arXiv.1901.04776
2019-01-15
Abstract:The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO, the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, we achieve reproducibly a same device with both signatures of superconductivity and clear anomalous Hall effect. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
Materials Science