Study on the Properties of CdMnTe Crystals Grown by Traveling Heater Method

Ping SHEN,Ji-jun ZHANG,Lin-jun WANG,Min SHEN,Wei LIANG,Hua MENG
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2014.01.007
2014-01-01
Abstract:CdMnTe crystals grown by vertical bridgman method contain lots of twins, impurities and inclusions, due to its high growth temperature, low stacking fault and high thermal stress, which hinders its application in nuclear radiation detectors. In this paper, the CdMnTe crystal was grown by travelling heater method (THM) in order to improve its crystal quality, and compared with the crystal grown by vertical bridgman (VB) method on the Mn axial distribution, impurity concentrations, Te inclusions and electrical properties. The results showed that the CdMnTe crystal grown by the THM had more uniform Mn distribution and lower impurity concentrations compared to the crystal grown by VB method. The size of Te inclusion in the crystal grown by THM was 5-25 ��m with the concentration of 105 cm-3, and the resistivity were in the range of 109-1010 ����cm with the conductivity of weak n-type. The energy response spectroscopy of CdMnTe detector fabricated on the crystals grown by THM was revealed under 241Am radiation at room temperature. The results demonstrate that CdMnTe crystals grown by THM have better crystal quality and electrical properties compared to that by VB method.
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