Abstract:Single crystals of Hg0.89Mn0.11Te have been successfully grown by vertical Bridgman method at the optimized growth conditions. The X-ray rocking curve shows that the as-grown Hg1−xMnxTe possesses high perfection. Hall measurement data suggest that the electronic properties of as-grown wafers satisfy the requirement of detector manufacture. The resistivity and magnetization of the crystal were also measured by the superconducting quantum interference device (SQUID) magnetometer in the temperature ranges 5–80 and 5–300 K, respectively. The applied magnetic fields were 8.0×105, 1.6×106, 3.2×106, and 5.2×106 A m−1 for the resistivity measurements, and 8.0×103 A m−1 for magnetization measurement. The results of reciprocal susceptibility versus temperature fit Curie–Weiss law very well at the temperatures above 40 K, but deviate from the law in the range 5–40 K, which shows that the crystal possesses paramagnetic properties in the temperature range, and the paramagnetism of the crystal enhances in the lower temperature range below 40 K. The resistivity decreases with an increase of applied magnetic field in the extrinsic conduction region (T>20 K) due to the decrease of the ionization energy ε1. In the hopping conduction region (T<20 K), the increased spatial extent of the acceptor wave function under magnetic field leads to impurity conduction, therefore, the difference of resistivity under different magnetic fields increases rapidly with decreasing temperature, and the difference of that under zero magnetic field and 5.2×106 A m−1 is more than 3 orders of magnitude at 5 K.

Study on the growth and thermal characteristics of mercury indium telluride crystals

High Temperature X-Ray Diffraction Study on Phase Transformation and Lattice Thermal Expansion of Mercury Indium Telluride Crystals

Study of Thermal Expansion of Mercury Indium Telluride Crystals by XRD Technique

Preparation and thermal stability of mercury indium telluride single crystals

Growth, Structure and Electrical Properties of Mercury Indium Telluride Single Crystals

Growth and Characterization of Mercury Indium Telluride Single Crystals

Synthesis and Crystal Growth of Mercury Indium Telluride

Hg(3-3x)In2xTe3: A Novel Semiconductor Material for Near Infrared Photovoltaic Detectors

Single-crystal Growth of Mercury Indium Telluride (MIT) by Vertical Bridgman Method (VB)

Crystal Growth of Mercury Indium Telluride

Etch Pits Observation And In Distribution In Mercury Indium Telluride Single Crystals

Defect Characterization And Composition Distributions Of Mercury Indium Telluride Single Crystals

Effects of Vacancies on the Thermal Expansion of Mercury Indium Telluride Crystals

Preparation and Properties of a Novel Near Infrared Photovoltaic Detector Single-Crystal Material

Growth and Properties of 40mm Diameter Hg1−xCdxTe Using the Two- Stage Pressurised Bridgman Method

Characterization of Hgmnte Crystals Grown by Vertical Bridgman Method

Growth and characterization of large-size CdMgTe single crystals doped with different in amounts

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Optical and Electronic Characterization on HgCdTe Materials

REAL-TIME MONITORING OF GROWTH PARAMETERS OF MBE GROWN HgCdTe