Temperature dependence of performance of ZnO-based metal-semiconductor- metal ultraviolet photodetectors

Gaoming Li,Jingwen Zhang,Xun Hou

DOI: https://doi.org/10.1016/j.sna.2014.01.029

2014-01-01

Abstract:•We demonstrate a temperature dependent resistivity of ZnO film.•We find that photocurrent and responsivity decrease with temperature rising.•We find that reducing the voltage is helpful to decrease the variation of responsivity.

What problem does this paper attempt to address?

Ultraviolet Photoresponse of ZnO Thin-Film Transistor Fabricated at Room Temperature

Wu Ping,Zhang Jie,Li Xi-Feng,Chen Ling-Xiang,Wang Lei,Lu Jian-Guo

DOI: https://doi.org/10.7498/aps.62.018101

2013-01-01

Abstract:Transparent thin-film transistor (TFT) with ZnO film as a channel layer is fabricated at room temperature. ZnO film has a high absorption in the UV region and ZnO-TFT is sensitive to the UV illumination. We investigate the ultraviolet photoresponse of ZnO-TFT and find that the illumination with 254 nm light results in an evident photoresponse. The residual conductivity is observed in ZnO channel even the UV light was removed one week before. The UV illumination can induce the formation of oxygen vacancy defects which will act as donors in ZnO channel.
Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Jianguo Lv,Yue Sun,Li Cao,Min Zhao,Fengjiao Shang,Sicong Mao,Yaoyao Jiang,Jinhua Xu,Feng Wang,Zhitao Zhou,Yiyong Wei,Gang He,Miao Zhang,Xueping Song,Zhaoqi Sun

DOI: https://doi.org/10.1007/s10854-015-3109-x

2015-01-01

Journal of Materials Science Materials in Electronics

Abstract:ZnO thin films were prepared by hydrothermal method in mixed solvent with different reaction temperatures. Microstructure, surface morphology, optical properties and UV photoresponse of the thin films have been investigated by means of X-ray diffractometer, scanning electron microscopy, laser micro-Raman spectrometer, UV–Vis spectrophotometer and interactive source meter instrument. The results indicated that ZnO thin films consist of ZnO nanoparticles with hexagonal wurzite structure. A small quantity of Zn(OH)2 appear as reaction temperature increase to 125 °C. ZnO thin film grown at 175 °C consists of many densely vertically aligned ZnO nano rods on the substrate and has the best preferential c-axis orientation. Three peaks centered at about 446, 568 and 1150 cm−1 have been attributed to E 2(high), A 1(LO) and 2A 1(LO) phonon mode. Broadening of the visible emission band may be attributed to abundant surface defects and surface states of the thin films. Variation of the E g may be attributed to the synergy of surface morphology and oxygen-vacancy (VO) density. The fast and slow UV photo response may be attributed to the adsorption and photo desorption of oxygen molecules on the surface of ZnO thin films and exchange process between oxygen gas and native deep defect level, respectively.
Recent Advances and Analysis in Research on UV Detectors Based on ZnMgO

张俊,马向丽,王钰萍,吕建国

2010-01-01

Abstract:ZnO-based ternary alloy semiconductors have been recognized as promising materials for UV detector due to their bandgap engineering.In particular,Zn_(1-x)Mg_xO-based ultraviolet detectors can detect ultraviolet light in the solar-blind region,so they are of great concern to many countries.At present,most detectors are of MSM interdigital structure,with the response peak around 300nm,response time reaching ns level,and UV-visible rejection ratio greater than four orders of magnitude.In this work,the recent advances in research on UV detectors based on ZnMgO films are introduced briefly and the property parameter such as film composition,structure,and device performance are discussed.
Temperature Dependence of Photoconductivity and Persistent Photoconductivity of Single ZnO Nanowires

Zhi-Min Liao,Yi Lu,Jun Xu,Jing-Min Zhang,Da-Peng Yu

DOI: https://doi.org/10.1007/s00339-008-5058-1

2009-01-01

Applied Physics A

Abstract:Photoelectrical properties of single ZnO nanowires have been investigated using photocurrent–voltage characteristics measurements varying with excitation photon energy and temperature. It is found that persistent photoconductivity (PPC) exists, and the PPC decreases with decreasing temperature. The temperature dependence of the PPC effect indicates that thermally activated return of electrons from shallow traps is responsible for the PPC phenomenon. The photosensitivity is found to be linear with the applied voltage, and it increases with decreasing temperature. A temperature dependence of photoconductivity gain was introduced to explain the experimental results.
Optical Temperature Sensor Based On Zno Thin Film'S Temperature-Dependent Optical Properties

Chenghua Sui,Juan Xia,Helin Wang,Tianning Xu,Bo Yan,Yuling Liu

DOI: https://doi.org/10.1063/1.3616361

IF: 1.6

2011-01-01

Review of Scientific Instruments

Abstract:A reflective fiber temperature sensor system based on the ZnO thin film is proposed. The transmittance spectra and temperature dependent optical property of the sensing head with ZnO thin film is investigated theoretically and experimentally, and the temperature resolution of similar to 1 degrees C is obtained in the temperature region of 300-773 K. The temperature sensing system is only related to the wavelength shift of transmittance spectra, and has a high stability without depending on the incident light intensity. This research results also indicate a fiber optical sensor with a broad temperature measurement range (10-1800 K) can be gained as a promising temperature sensing device, and can be applied into some extremely environments, such as aircraft, nuclear power station and power transmission system, and so on. (C) 2011 American Institute of Physics. [doi:10.1063/1.3616361]
Effects of Annealing Temperature on the Characteristics of Ga-doped ZnO Film Metal-Semiconductor-metal Ultraviolet Photodetectors

L. C. Yang,R. X. Wang,S. J. Xu,Z. Xing,Y. M. Fan,X. S. Shi,K. Fu,B. S. Zhang

DOI: https://doi.org/10.1063/1.4791760

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Metal-semiconductor-metal ultraviolet photodetectors were fabricated by using the sputtered Ga-doped ZnO (GZO) thin films on sapphire substrate as an active layer. Current-voltage (I-V) and opto-electrical characteristics of the devices were investigated. It is found that the peak optical responsivity of the devices can be significantly improved by selecting appropriate thermal annealing temperature, i.e., from 12.0 A/W (annealed at 500 °C) and 54.0 A/W (700 °C). Furthermore, dark current of the devices drops by two orders of magnitude after annealing process. The significant improvement in performance of the device is ascribed to the removal of massive defect centers of the GZO thin films and increase of Schottky barrier height between the GZO and metal electrodes after thermal annealing at appropriate temperatures.
Comparative Study of Encapsulated Solution-Processed Zinc Oxide Ultraviolet Photodetectors with Different Contacts

Siying Li,Wei Tang,Xiaoli Xu,Motao Cao,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1002/pssa.201431220

2014-01-01

Abstract:Ultraviolet (UV) photodetectors were fabricated with low temperature (<150 degrees C) solution-processed zinc oxide (ZnO) layers. A polydimethylsiloxane (PDMS) layer was used as the encapsulation to protect the devices from ambient effects. Current-voltage (I-V) characteristics, transient characteristics, and the encapsulation effect were compared for ohmic and Schottky contact devices that were formed with aluminum and silver electrodes, respectively. Schottky contact devices were shown to be able to achieve rapid response with the recovery time not affected by the encapsulation. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
High Performance Ultraviolet Photodetectors with Atomic-Layer-deposited ZnO Films Via Low-Temperature Post-Annealing in Air

Jian Gao,Wen-Jun Liu,Shi-Jin Ding,Hong-Liang Lu,David Wei Zhang

DOI: https://doi.org/10.1063/1.5007131

IF: 1.697

2018-01-01

AIP Advances

Abstract:In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs). The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC) also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A) and a large ultraviolet-visible rejection ratio (4.06×105).
Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Dongdong Li,Liang Zhao,Ruqian Wu,Carsten Ronning,Jia G. Lu

DOI: https://doi.org/10.1007/s12274-011-0158-1

IF: 9.9

2011-01-01

Nano Research

Abstract:Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurtzite lattice. The photocurrent properties at different temperatures have been systematically investigated for nanowires configured as a three-terminal device. Among the experimental highlights, a pronounced semiconductor-to-metal transition occurs upon UV band-to-band excitation. This is a consequence of the reduction in electron mobility arising from the drastically enhanced Coulomb interactions and surface scattering. Another feature is the reproducible presence of two resistance valleys at 220 and 320 K upon light irradiation. This phenomenon originates from the trapping and detrapping processes in the impurity band arising from the native defects as well as the extrinsic Ga dopants. This work demonstrates that due to the dimensional confinement in quasi-one-dimensional structures, enhanced Coulomb interaction, surface scattering, and impurity states can significantly influence charge transport.
Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Yang Wang,Fang Zhong,Hailu Wang,Hao Huang,Qing Li,Jiafu Ye,Meng Peng,Ting He,Yunfeng Chen,Yueming Wang,Lili Zhang,He Zhu,Xianying Wang

DOI: https://doi.org/10.1088/1361-6528/ab8e75

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, as a direct wide band gap semiconductor, zinc oxide (ZnO) nanomaterial has attracted a lot of attention. However, the widely investigated ZnO materials are strongly limited in fast-response and broadband photodetectors due to their inherent weaknesses, so an effective structure or mechanism of ZnO nanostructure photodetector is greatly needed. In this work, a photogating-controlled photodetector based on a ZnO nanosheet-HfO2-lightly doped Si architecture is demonstrated. Its performance was significantly improved by the photogating-controlled local field at the Si and HfO2 interfaces compared to the findings in other published works on ZnO. Consequently, the photodetector not only effectively balances the responsivity (as high as 5.6 A W-1) and response time (400 µs), but also broadens the wavelength response of the ZnO-based photodetectors from visible to near-infrared light range (~1200 nm). Additionally, the photogating-controlled ZnO photodetector enables high-resolution imaging both in the visible and near-infrared bands. Our photogating-controlled ZnO photodetectors not only exemplify the controllability of the gate electrode in high mobility materials but also provide a basis for the development of fast speed and high responsivity detection of high mobility materials.
Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors

Thomas Heuser,Caitlin Chapin,Max Holliday,Yongqiang Wang,Debbie G. Senesky

DOI: https://doi.org/10.48550/arXiv.1912.02321

2019-12-05

Abstract:The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. We irradiated the devices with 200 keV protons to a fluence of 1016 cm-2. Examination of the X-ray diffraction (XRD) rocking curves indicates a strongly preferred (100) orientation for the grains of the as-deposited film, with decreases in crystal quality for all irradiated samples. In addition, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. We observed shifts of these peaks towards theoretical unstrained positions in the irradiated films relative to the as-deposited film indicate partial relaxation of this strain. Raman spectra also indicate increases of oxygen vacancies (V_O ) and zinc interstitials (Zn_i ) relative to the control sample. Additionally, photocurrent versus time measurements showed up to 2x increases in time constants for samples irradiated at lower temperatures months after irradiation, indicating that the defects introduced by suppression of thermally-activated dynamic annealing process has a long-term deleterious effect on device performance.

Applied Physics,Materials Science,Instrumentation and Detectors
Modulation of Oxygen Vacancies in InSnZnO Thin Films and Applications for High-Speed Metal-Semiconductor-metal Ultraviolet Photodetectors

Bojia Chen,Jiyuan Zhu,Qi Han,Shice Wei,Yu Zhang,Shen Hu,Xuefeng Wu,David W. Zhang,Qingqing Sun,Rong Zhang,Kai Huang,Li Ji

DOI: https://doi.org/10.1016/j.apsusc.2024.160586

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:Enhancing the response speed of photodetectors is of great significance, for meeting the requirements of highdensity optical arrays and integration. Wide bandgap indium oxide with high electron mobility makes it suitable for the preparation of high-speed response ultraviolet photodetectors. Nevertheless, oxide semiconductor is prone to form oxygen vacancies during the growth process, leading to persistent photoconductivity in photodetectors, which considerably limits the practical application in ultraviolet detection. In this work, a wellperforming metal-semiconductor-metal structure ultraviolet photodetector based on amorphous indium-tinzinc-oxide was fabricated via co-sputtering technique. By enhancing the oxygen ratio during the co-sputtering, the concentration of oxygen vacancies was effectively reduced, which modulated the performances of the photodetector. This approach not only shortened the photodetector's response time but also omitted the annealing step, enabling a room-temperature fabrication process. As a result, the optimized indium-tin-zincoxide photodetector of 30 % oxygen exhibited remarkably rapid response characteristics under 367 nm ultraviolet irradiation, with rise and decay times of 0.018 and 0.066 s, respectively. Simultaneously, the optimized indium-tin-zinc-oxide phototransistor exhibited exceptional performance metrics, including a high photoresponsivity of 480 A/W, a detectivity of 3.2 x 1012 Jones and an external quantum efficiency of 1336 % under 367 nm ultraviolet irradiation with 1 mW/cm2 light intensity.
High performance ZnO quantum dot (QD)/ magnetron sputtered ZnO homojunction ultraviolet photodetectors

Zeping Li,Xiong Yu,Yunhao Zhu,Sisi Liu,Xiaoyan Wen,Haifei Lu,Cong Wang,Xiao Li,Ming-Yu Li,Yingping Yang

DOI: https://doi.org/10.1016/j.apsusc.2021.152352

IF: 6.7

2022-04-01

Applied Surface Science

Abstract:The performance of photodetectors can be simultaneously determined by the photoinduced carrier generation and transportation, and thereby a huge challenge still remains for the fabrication of ultra-sensitive ZnO UV due to the irreconcilable contradiction between high crystallinity and additional adsorption–desorption sites. Here, we demonstrate ZnO quantum dot (QD) / magnetron sputtered ZnO homojunction photodetectors with an excellent performance by systematically varying the thickness ratios between two ZnO layers. With the well-balanced ratio, ZnO QDs offers extra adsorption–desorption sites owing to the increased surface defects, and accelerated carrier transportation is concurrently achieved with the highly crystallized magnetron sputtered ZnO layers. As a consequence, the responsivity and external quantum efficiency of the ZnO homojunction photodetector fabricated at 250 ℃ radically increased to ∼ 551 mA/W and 195.4% under 350 nm light illumination (8.58 mW cm−2) at the bias of 10 V. Depending on the annealing temperature, the responsivity of the ZnO homojunction photodetector is further increased to ∼ 1.3 A/W at 450 ℃ even with an identical ratio on account of the improved crystallinity, which paves the path to overcome the hindrance for the ultra-sensitive UV photodetection.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Performance of different Ga-doped ZnO nanosheets ultraviolet photodetectors: experimental and theoretical studies

Longyu Zhao,Zhaolin Yuan,Jianfeng He,Xueyuan Wang,Shengyu You

DOI: https://doi.org/10.1007/s10854-024-13508-1

2024-09-23

Journal of Materials Science Materials in Electronics

Abstract:High-performance and low-cost ultraviolet (UV) photodetector has always been the desired goals. In this work, Ga-doped ZnO (ZnO:Ga) nanosheets with different Ga doping concentrations from 0 to 6 mol% were synthesized by a hydrothermal method. Furthermore, six ZnO:Ga nanosheets UV photodetectors were fabricated by using the resulting ZnO:Ga nanosheets as the photosensitive layers, their UV detection performances were investigated in detail. The experimental results showed that the 1% Ga-doped ZnO nanosheets UV photodetector had the best performance among these devices, its responsivity was up to 100.2 A/W and response time was only 1.8 s. In addition, first-principles calculation was used to analyze the band structure and density of states from ZnO:Ga nanosheets with different doping concentrations. It was found that the 1% Ga-doped ZnO nanosheets had the narrowest band gap and the most concentrated conduction band density of states. The results indicated that proper Ga doping concentration could effectively improve photoelectric properties of ZnO:Ga nanosheets.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Fabrication and Properties of ZnO Photoconductive UV Detector

叶志镇,张银珠,陈汉鸿,何乐年,邹璐,黄靖云,吕建国

DOI: https://doi.org/10.3321/j.issn:0372-2112.2003.11.002

2003-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:Highly c-axis oriented ZnO thin films were deposited on single crystal Si(111) substrates by pulsed laser deposition (PLD). The photoconductive UV detectors based on ZnO thin films, being an MSM structure with interdigital (IDT)configuration, were fabricated by the desquamation photoetching method. The Al film-electrodes were deposited by planar magnetron sputtering. Results showed that the alloying temperature should be lower than 600°C. The I-V characteristic and the UV photoresponsivity of the detector were also investigated, indicating a good ohmic behavior between Al and ZnO thin film, a resistance about l00 KΩ for the detector, and a photoresponsivity of 0.5 A/W under ultraviolet illumination in ultraviolet region.
High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction

Jiafei Yao,Jun Zhang,Zeng Liu,Jing Chen,Maolin Zhang,Yufeng Guo,Weihua Tang,Wei Wei,Lili Yang

DOI: https://doi.org/10.1088/1361-6463/ac7d1c

Abstract:Ga2O3-based photodetectors are promising for deep ultraviolet (DUV) detection owing to the relatively large bandgap (>4.5 eV) of Ga2O3. High-temperature applications, such as flame detection and aerospace have been a major challenge to the reliability of electronic devices including photodetectors. All-oxide electronic devices have great potential for applications that require high thermal stability. Therefore, we constructed an all-oxide self-powered DUV photodetector based on ϵ-Ga2O3/ZnO heterojunction and examined its ruggedness in a high-temperature environment up to 600 K. A photocurrent of up to 0.3 μA and a photo-to-dark current ratio of ∼8000 were observed at room temperature. In addition, the ϵ-Ga2O3/ZnO heterojunction remained functional even at an ambient temperature of 600 K. It was also found that sensing performance including photo-to-dark current ratio (PDCR), responsivity, detectivity, and external quantum efficiency degraded as the temperature increased. Detailed generation/recombination processes, as well as carrier transport, were explored to reveal physical insights. The thermal stability of the ϵ-Ga2O3/ZnO photodetector is thus examined, which would provide the basis for further development.

Physics,Engineering,Materials Science
Metal-Free All Transparent Zinc Oxide-Based Ultraviolet Photodetectors With Simple Bilayer Structure

Li-wen Wang,Tai-Yu Wu,Sheng-Yuan Chu

DOI: https://doi.org/10.1109/jsen.2024.3406759

IF: 4.3

2024-07-19

IEEE Sensors Journal

Abstract:Ultraviolet (UV) radiation harms humans and has a chronic effect on the skin and eyes. This article presents a metal-free, highly transparent zinc oxide-based UV sensor. To avoid the interface mismatch, gallium-doped zinc oxide (GZO) is used as the top electrode, which has very low resistivity to play the role of the transparent interdigital electrode on top of the device to maintain the transmittance. The GZO/ZnO photoconductor configuration is prepared by sputtering the films at room temperature on the glass substrate. For the material and device properties, X-ray diffraction (XRD), UV-visible spectroscopy, scanning electron microscope (SEM), and semiconductor parameter analyzer are used. The high visible transmittance is over 85%, with excellent sensitivity under the UV light density of 4 mW/cm2 with a wavelength of 365 nm. The device performance is not only based on the photoconductive effect but also the pyro-photonic effect of reducing the persistent photoconductivity (PPC), which enhances the response time. Without a mismatch between the interface, the externally applied bias does not affect the dark current. This simple structure provides nice transmittance over 85% with a small external applied bias 1 V that causes a 3-order ON-OFF ratio. This work offers a highly transparent ZnO-based photoconductor with an excellent response speed. To the best of our knowledge, it is the first report about all ZnO-based UV photodetectors (zinc composition as metal is over 95%).

engineering, electrical & electronic,instruments & instrumentation,physics, applied
Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films ∗

Liu Jiahang,Lei Li,fan Zhang,Yaping Qi,Zhenping Wu,Weihua Tang

DOI: https://doi.org/10.1088/1402-4896/ad3b4f

2024-04-06

Physica Scripta

Abstract:Zinc gallate (ZnGa2O4) is a promising material for deep-ultraviolet (DUV) photodetectors, owing to its wide bandgap and high transparency. However, the effect of substrate temperature on the structural and optical properties of ZnGa2O4 thin films prepared by magnetron sputtering is not well understood. Here, we report a systematic study of the influence of substrate temperature on the crystal quality, stoichiometry, bandgap, and photodetection performance of ZnGa2O4 thin films deposited on sapphire substrates. We find that the films undergo a phase transition from amorphous to polycrystalline at 300°C, and then to single crystalline at 500°C, accompanied by an increase in the bandgap from 4.6 to 4.9 eV. We also fabricate metal-semiconductor-metal photodetectors based on the ZnGa2O4 thin films with Ti/Au electrodes, which exhibit excellent Ohmic contact and high light-to-dark current ratio. The photodetectors show remarkable and stable DUV response, with the highest performance achieved at a substrate temperature of 650°C. Our results demonstrate the crucial role of substrate temperature in tailoring the crystal structure and DUV photodetection of ZnGa2O4 thin films, and provide a facile route for optimizing their performance.

physics, multidisciplinary
Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

Yuxia Yang,Liu Wang,Shudong Hu,Dongyang Han,Simiao Wu,Zilong Wang,Wenrui Zhang,Jichun Ye

DOI: https://doi.org/10.1016/j.apsusc.2023.158031

IF: 6.7

2023-07-22

Applied Surface Science

Abstract:Ternary complex oxides exhibit strong compositional dependence on their structure and functionalities. While the profound impact of the cation stoichiometry on the physical properties of ZnGa 2 O 4 is widely recognized, how it affects the ultraviolet photodetection behavior remains not clear. Here we apply a combinatorial pulsed laser deposition technique to establish graded composition in Zn x Ga 1-x O (0 ≤ x ≤ 1) across a 2-inch sapphire substrate. In combination with structural and optical characterizations, a systematic investigation of the compositional effect on the phase, crystallinity and bandgap for the Zn x Ga 1-x O system is performed, and their further impact on the photodetection performance is compared by fabricating multiple metal–semiconductor-metal (MSM) photodetectors based on the graded Zn x Ga 1-x O films. Decent photodetection behavior is seen for the photodetectors with x ≤ 0.33, above which the performance is largely limited by the conductive phase formation. An optimized compositional range of x = 0.18–0.27 is identified to deliver the best device performance, which includes a responsivity of 12.88 A/W and a photo-to-dark current ratio of 2.8 × 10 8 . This slight zinc deficiency is considered beneficial for the formation of moderate level of oxygen vacancies or antisite defects that boosts carrier transport. This study sheds light on the composition-dependent evolution of structure and properties in ternary ultrawide-bandgap semiconductors for high-performance ultraviolet photodetection.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
High Performance Charge-Transfer Induced Homojunction Photodetector Based on Ultrathin ZnO Nanosheet

Yang Wang,Peng Wang,Yuankun Zhu,Jinrao Gao,Fan Gong,Qing Li,Runzhang Xie,Feng Wu,Ding Wang,Junhe Yang,Zhiyong Fan,Xianying Wang,Weida Hu

DOI: https://doi.org/10.1063/1.5063611

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Nanostructured zinc oxide (ZnO) semiconductors have emerged as promising materials for high-performance photodetectors due to their natural direct bandgap and extraordinary physicochemical properties. However, the oxygen vacancy defects of nano-ZnO can easily trap oxygen molecules in air and generate charge transfer at the interface, which induced continuous photoconductance that limited the development and application of ZnO in photodetection. Here, we demonstrate a homojunction ultrathin ZnO nanosheet photodetector with high performance and propose a better dominant photoresponse mechanism of the ZnO nanosheet driven by the charge transfer induced local field. The strong localized electric field significantly accelerates the separation of photo-generated carriers and effectively suppresses the dark current. Thus, the photodetector of the charge transfer induced homojunction exhibits ultralow dark current (10−12 A), ultra-high specific detectivity (up to ∼1014 Jones), and fast rising (300 ms) and decaying times (310 ms), taking advantages of high-performance and fast response speed and subverting the limitation of traditional ZnO photodetectors in the field of application. An easy-fabrication, fast response, and high-performance photodetector proposed here provides a good paradigm for the next-generation photodetectors based on two-dimensional nanostructures.

Temperature dependence of performance of ZnO-based metal-semiconductor- metal ultraviolet photodetectors

Ultraviolet Photoresponse of ZnO Thin-Film Transistor Fabricated at Room Temperature

Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Recent Advances and Analysis in Research on UV Detectors Based on ZnMgO

Temperature Dependence of Photoconductivity and Persistent Photoconductivity of Single ZnO Nanowires

Optical Temperature Sensor Based On Zno Thin Film'S Temperature-Dependent Optical Properties

Effects of Annealing Temperature on the Characteristics of Ga-doped ZnO Film Metal-Semiconductor-metal Ultraviolet Photodetectors

Comparative Study of Encapsulated Solution-Processed Zinc Oxide Ultraviolet Photodetectors with Different Contacts

High Performance Ultraviolet Photodetectors with Atomic-Layer-deposited ZnO Films Via Low-Temperature Post-Annealing in Air

Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors

Modulation of Oxygen Vacancies in InSnZnO Thin Films and Applications for High-Speed Metal-Semiconductor-metal Ultraviolet Photodetectors

High performance ZnO quantum dot (QD)/ magnetron sputtered ZnO homojunction ultraviolet photodetectors

Performance of different Ga-doped ZnO nanosheets ultraviolet photodetectors: experimental and theoretical studies

Fabrication and Properties of ZnO Photoconductive UV Detector

High-temperature reliability of all-oxide self-powered deep UV photodetector based on ϵ-Ga2O3/ZnO heterojunction

Metal-Free All Transparent Zinc Oxide-Based Ultraviolet Photodetectors With Simple Bilayer Structure

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films ∗

Combinatorial tuning of structure and optoelectronic properties of Zn-Ga-O thin films for deep ultraviolet photodetection

High Performance Charge-Transfer Induced Homojunction Photodetector Based on Ultrathin ZnO Nanosheet