Abstract:Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on the graphene surface. In this work, we study the electronic structures and transport properties of a two-terminal zigzag graphene nanoribbon (ZGNR) device whose scattering region is covered by various adsorbates within the framework of the tight-binding approximation, by taking into account the coupling strength gamma between adsorbates and carbon atoms, the adsorbate concentration n(i), and the on-site energy disorder of adsorbates. Our results indicate that when the scattering region is fully covered by homogeneous adsorbates, i.e., n(i) = 1, a transmission gap opens around the Dirac point and its width is almost proportional to gamma(2). In particular, two conductance plateaus of G = 2e(2)/h appear in the vicinity of the electron energy E = +/-gamma. When the scattering region is partially covered by homogeneous adsorbates (0 < n(i) < 1), the transmission gap still survives around the Dirac point even at low and its width is firstly increased by n(i) and then declined by further increasing n(i); whereas the conductance decreases with n(i) in the regime of low n(i) and increases with n(i) in the regime of high While in the presence of disordered adsorbates whose on-site energies are random variables characterized by the disorder degree, the transmission gap disappears at low n(i) and reappears at relatively high Furthermore, the transmission ability of the ZGNR device can be enhanced by the adsorbate disorder when the disorder degree surpasses a critical value, contrary to the localization picture that the conduction of a nanowire becomes poorer with increasing the disorder degree. The physics underlying these transport characteristics is discussed. Our results are in good agreement with experiments and may help for engineering graphene devices.

Tunable Band Gap in Germanene by Surface Adsorption

Tunable and sizable band gap in silicene by surface adsorption.

Tunable bandgap in silicene and germanene.

Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Tunability of topological edge states in germanene at room temperature

Tunable band gap and enhanced thermoelectric performance of tetragonal Germanene under bias voltage and chemical doping

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched Between Hexagonal Boron Nitride

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Tunable band gap in few-layer graphene by surface adsorption

Tunable Electronic and Topological Properties of Germanene by Functional Group Modification

Bandgap Tuning of C3N Monolayer: A First-Principles Study

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Two-dimensional germanium islands with Dirac signature on Ag2Ge surface alloy

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: Towards Tunneling Transistors.

Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3$d$ Transition Metal Atoms

Enhancement of electron transport and bandgap opening in graphene induced by adsorbates

Enhancement of electron transport and band gap opening in graphene induced by adsorbates