Abstract:The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifunctional devices with high performance, it is necessary to modulate the barrier height and contact type at the interface. First-principles calculations based on the density functional theory (DFT) are implemented in the VASP package. The generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) with van der Waals (vdW) correction proposed by Grimme (DFT-D3) is chosen due to its good description of long-range vdW interactions. It is demonstrated that weak vdW interactions dominate between graphene and InSe with their intrinsic electronic properties preserved. We find that the n-type ohmic contact is formed at the graphene/InSe interface with the Fermi level through the conduction band of InSe (ΦBn < 0). The Fermi level of graphene/InSe heterostructure moves down to below the Dirac point of graphene layer, which results in p-type (hole) doping in graphene. Moreover, the external electric field is effective to tune the Schottky barrier, which can control not only the Schottky barrier height but also the type of contact. With the negative external electric field varying from 0 to –1 V/nm, the conduction band minimum of InSe below the Fermi level declines gradually but the n-type ohmic contact is still preserved. Nevertheless, with the positive external electric field varying from 0 to 0.8 V/nm, the conduction band minimum of InSe shifts upward and across the Fermi level, the conduction band minimum of InSe is closer to the Fermi level than the valence band maximum, which indicates that the n-type Schottky contact is formed. The Fermi level moves from the the conduction band minimum to the valence band maximum of InSe when the positive external electric field increases from 0.8 V/nm to 2 V/nm. The n-type Schottky barrier height exceeds the p-type Schottky barrier height gradually, which demonstrates that the positive external electric field transforms the n-type Schottky contact into the p-type Schottky contact at the graphene/InSe interface. When the positive external electric field exceeds 2 V/nm, the valence band of InSe moves upward and cross the Fermi level (ΦBp < 0), the ohmic contact is obtained again. Meanwhile, p-type (hole) doping in graphene is enhanced under negative external electric field and a large positive external electric field is required to achieve n-type (electron) doping in graphene. The external electric field can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/InSe interface.

Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Electric and thermoelectric properties of graphene bilayers with extrinsic impurities under applied electric field

Tunable bandgap in silicene and germanene.

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Opening the Band Gap of Graphene Through Silicon Doping for the Improved Performance of Graphene/gaas Heterojunction Solar Cells.

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Tunable band gap and enhanced thermoelectric performance of tetragonal Germanene under bias voltage and chemical doping

Tunable Band Gap in Germanene by Surface Adsorption

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

SiGe/AsSb bilayer heterostructures: structural characteristics and tunable electronic properties

GaTe/CdS heterostructure with tunable electronic properties via external electric field and biaxial strain

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: Towards Tunneling Transistors.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Tuning Schottky Barrier in Graphene/inse Van Der Waals Heterostructures by Electric Field

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

Modulation of Semiconductor Doping of 2D GeSe in H-Bn/gese Van Der Waals Heterostructure