Abstract:Low-buckled silicene, germanene, and stanene are group$-IV$ graphene allotropes. They form a honeycomb lattice out of two interpenetrating ($A$ and $B$) triangular sublattices that are vertically separated by a small distance $\Delta_z$. The atomic numbers $Z$ of silicon, germanium, and tin are larger to carbon's ($Z_C=6$), making them the first experimentally viable two-dimensional topological insulators. Those materials have a twice-energy-degenerate atomistic structure characterized by the buckling direction of the $B$ sublattice with respect to the $A$ sublattice [whereby the $B-$atom either protrudes {\em above} ($\Delta_z>0$) or {\em below} ($\Delta_z<0$) the $A-$atoms], and the consequences of that energy degeneracy on their elastic and electronic properties have not been reported thus far. Here, we uncover {\em ferroelastic, bistable} behavior on silicene, which turns into an {\em average} planar structure at about 600 K. Further, the creation of electron and hole puddles obfuscates the zero-temperature SOC induced band gaps at temperatures as low as 200 K, which may discard silicene as a viable two-dimensional topological insulator for room temperature applications. Germanene, on the other hand, never undergoes a low-buckled to planar 2D transformation, becoming amorphous at around 675 K instead, and preserving its SOC-induced bandgap despite of band broadening. Stanene undergoes a transition onto a crystalline 3D structure at about 300 K, preserving its SOC-induced electronic band gap up to that temperature. Unlike what is observed in silicene and germanene, stanene readily develops a higher-coordinated structure with a high degree of structural order. The structural phenomena is shown to have deep-reaching consequences for the electronic and vibrational properties of those two dimensional topological insulators.

Tunability of topological edge states in germanene at room temperature

Quantum Spin Hall States and Topological Phase Transition in Germanene

Tunable Electronic and Topological Properties of Germanene by Functional Group Modification

Tunable Band Gap in Germanene by Surface Adsorption

Tunable band gap and enhanced thermoelectric performance of tetragonal Germanene under bias voltage and chemical doping

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Realization of a one-dimensional topological insulator in ultrathin germanene nanoribbons

Moiré-modulated band gap and van Hove singularities in twisted bilayer germanene

Gate Voltage Controlled Thermoelectric Figure of Merit in Three-Dimensional Topological Insulator Nanowires

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe

Electron-hole scattering limited transport of Dirac fermions in a topological insulator

Temperature tunability of topological phase transitions and edge states in two-dimensional acoustic topological insulators

Realization of monolayer ZrTe5 topological insulators with wide band gaps

Thermally-driven phase transitions in freestanding low-buckled silicene, germanene, and stanene

Electronic structural critique of interesting thermal and optical properties of C$_{17}$Ge germagraphene

Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Topological States in Finite Graphene Nanoribbons Tuned by Electric Fields