Electrical Properties and High Figure-of-merit of Dielectric Tunable (1–x)ba(zr0.25ti0.75)o3–xmgo Thick Films Prepared by Tape-Casting

Yan Wang,Huiqing Fan,Biaolin Peng,Pengrong Ren
DOI: https://doi.org/10.1016/j.jallcom.2013.11.083
IF: 6.2
2013-01-01
Journal of Alloys and Compounds
Abstract:(1-x) Ba(Zr0.25Ti0.75) O3-xMgO (x = 0.0, 0.1, 0.2, 0.3, 0.4) thick films were prepared by using a solid state reaction and tape-casting method. It is found that Mg not only exists in the MgO but also in the Ba(Zr0.25Ti0.75)O-3 detected by X-ray diffraction, field-emission scanning electron microscopy, transition electron microscopy and energy dispersive spectrum. With the increase of MgO content, the Curie temperature of thick films shifts from room temperature (283 K) of x = 0.0 to lower temperature (153 -173 K). The dielectric relaxation properties of thick films were described by a Lorentz relation and the dc bias electric field dependences of the dielectric permittivity were described by a Johnson's phenomenological equation based on Devonshire's theory. The dielectric tunability, loss angle tangent and figure-of-merit of x = 0.4 at room temperature and 42 kV/cm were 30.56%, 0.00139 and 219.86, respectively. (C) 2013 Elsevier B.V. All rights reserved.
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