Abstract:With the development of infrared optoelectronic technology, high responsivity, ultra-low dark current, and high response speed have become important factors of the next generation of infrared photodiodes. However, the minimum thickness of the absorber layer is limited to approximately one or several wavelength lengths to acquire high quantum efficiency, which results in a long transit time of photogenerated carriers. In this work, we propose a photon-trapping structure that uses the skin effect of metals to generate horizontal local modes to enhance the absorption of infrared photodiodes. The photon-trapping structure consists of an artificial grating structure covered by a metallic film. Importantly, we develop a simplified theoretical model to describe the local mode, which is then being used to design the realistic photon-trapping structure presented in this work. This design method is universal and we discuss the optical properties of the photon-trapping structure in InAs, InSb, InAs/GaSb type-II superlattices, InAs/InAsSb type-II superlattices, and HgCdTe infrared photodiodes. Both absorption of optical properties and responsivity of optoelectrical properties are numerically investigated in a systematic way. The optical simulations indicate that the absorption of the HgCdTe infrared photodiodes exceeds 80% at 8.5 ∼ 11 µm with a maximum value of 95% at 9.73 µm. The optoelectrical simulations show that the responsivity at 7 ∼ 10 µm is significantly enhanced compared to that of the plain HgCdTe infrared photodiodes without the photon-trapping structure. We further investigate the optical crosstalk in the HgCdTe pixel array employing the photon-trapping structure. The optical crosstalk significantly reduces as the pixel spacing increases. Our work provides a design method for developing small pixel, large scale, and low dark current focal plane array infrared photodiodes.

Structure design of HgCdTe mid-wavelength photon trapping infrared focal plane arrays

Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure

Skin Effect Photon-Trapping Enhancement in Infrared Photodiodes.

A Junction-Level Optoelectronic Characterization of Etching-Induced Damage for Third-Generation HgCdTe Infrared Focal-Plane Array Photodetectors

Upmost efficiency, few-micron-sized midwave infrared HgCdTe photodetectors

An efficient coupling structure for THz detectors array

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Enhanced Performance of HgCdTe Midwavelength Infrared Electron Avalanche Photodetectors with Guard Ring Designs

Design and Fabrication of Plasmonic Tuned THz Detectors by Periodic Hole Structures

Narrowband HgCdTe infrared photodetector with integrated plasmonic structure

Pbte Photovoltaic Mid-Ir Detectors

Controlling of Avalanche Dark Carriers in Realizing Hot Single Photon Detector

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Mercury telluride colloidal quantum-dot focal plane array with planar p-n junctions enabled by in situ electric field–activated doping

Mid-IR Photodetection by Interlayer Exciton in 2D Heterostructure

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

Effects of deep-level traps on the transport properties of high-flux X-ray CdZnTe detectors

Temperature-Sensitive Junction Transformations For Mid-Wavelength Hgcdte Photovoltaic Infrared Detector Arrays By Laser Beam Induced Current Microscope

Multi-Physics Field Based Simulation on the Response and Saturation Properties of Hg1-xCdxTe Based Photovoltaic Detectors With Composition Gradients

Enhanced Performance of HgCdTe Long-Wavelength Infrared Photodetectors with Nbn Design