Abstract:A broadband photodetector with high performance is highly desirable for the optoelectric and sensing application. Herein, we report a "photo-thermo-electric" (PTE) detector based on an ultrathin SnTe film. The (001)-oriented SnTe films with the wafer size scale are epitaxially grown on the surface of sodium chloride crystals by a scalable sputtering method. Due to the giant PTE effect under laser spot excitation on the asymmetric position between two terminals, a built-in electrical field is produced to drive bulk carriers for a self-powered photodetector, leading to a broad spectral response in the wavelength range from 404 nm to 10.6 μm far beyond the limitation of the energy band gap. Significantly, the photodetector displays a high on/off photoswitching ratio of over 105 with a suppressed dark current, which is 4–5 orders of magnitude higher than that of other reported SnTe-based detectors. Under zero external bias, the device yields the highest detectivity of ∼1.3 × 1010 cm Hz1/2 W–1 with a corresponding responsivity of ∼3.9 mA W–1 and short rising/falling times of ∼78/84 ms. Furthermore, the photodetector transferred onto the flexible template exhibits excellent mechanical flexibility over 300 bending cycles. These findings offer feasible strategies toward designing and developing low-power-consumption wearable optoelectronics with competitive performance.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c15639?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c15639</a>.Digital image of scalable sputtering growth process of SnTe film on a NaCl substrate; TEM images and SAED images; AFM image of the SnTe and the corresponding height profile; absorption spectrum of the SnTe film; dynamic photoresponse curves measured after different months; dynamic photoresponse curves measured under environmental and vacuum condition, respectively; J–V curves and dynamic response curves illuminated by 2000 nm wavelength laser with different power intensities; J–V curves and dynamic response curves illuminated by 10.6 μm wavelength laser with different power intensities; noise spectrum of the device; and photocurrent of the fabricated flexible SnTe detector under different bending radii (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15639/suppl_file/am0c15639_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Pbte Photovoltaic Mid-Ir Detectors

PbTe Thin Film Mid-Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy

Development of high-operation-temperature (up to 150 K) mid-wave infrared photodetectors based on p – n junctions in PbTe single crystals

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

A Lattice-mismatched PbTe/ZnTe Heterostructure with High-speed Mid-infrared Photoresponses.

Ultrahigh-Speed Mid-Infrared Photodetectors with 2-D Electron Gas in a CdTe/PbTe Heterojunction

Bi 2 S 3 Electron Transport Layer Incorporation for High-Performance Heterostructure HgTe Colloidal Quantum Dot Infrared Photodetectors

A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector

Mid-Infrared Photodetection of Type-II Dirac Semimetal 1T-PtTe 2 Grown by Molecular Beam Epitaxy

Photothermoelectric SnTe Photodetector with Broad Spectral Response and High On/Off Ratio

Decipher the Wavelength and Intensity Using Photothermoelectric Detectors.

Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 μm

Solution-processed Flexible MAPbI3 Photodetectors with ZnO Schottky Contacts.

Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response

Rational Composition Engineering for High-Quality Pb-Sn Photodetector Toward Sensitive Near-Infrared Digital Imaging Arrays

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Broadband High-Responsivity Photodetectors Based on Large-Scale Topological Crystalline Insulator SnTe Ultrathin Film Grown by Molecular Beam Epitaxy

High-Performance Vis–NIR Photodetectors Based on Two-Dimensional Bi2Te3 Thin Film and Applications

Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid‐Infrared Imaging

Short-wave infrared sensitive broadband photodetectors based on an HgTe quantum dot film