Abstract:Here, a ZnO thin film was deposited on a silicon substrate. The hexagonal structure of this deposited film was measured by x-ray diffraction and atomic force microscopy (AFM) without further processing, specifically annealing. Density functional theory (DFT) and DFT+U calculations were conducted on ideal ZnO bulk crystal with crystal size a=3.249documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$a=3.249,$$end{document}Å and c=5.207documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$c=5.207,$$end{document}Å, and an experimental unit cell estimated by x-ray and AFM analysis a=3.069documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$a=3.069,$$end{document}Å and c=5.3156documentclass[12pt]{minimal}usepackage{amsmath}usepackage{wasysym}usepackage{amsfonts}usepackage{amssymb}usepackage{amsbsy}usepackage{mathrsfs}usepackage{upgreek}setlength{oddsidemargin}{-69pt}egin{document}$$c=5.3156,$$end{document}Å. A vertical Schottky diode with the structure Ag/ZnO/Ti/Al/n-Si(100) was fabricated on the aforementioned deposited film with optimized parameters. The structure showed Schottky behavior without annealing, indicating oxide layer formation at the Ag/ZnO interface. We obtained contradictory results to the experimental Schottky nature for Ag/ZnO when calculating the structure by DFT+U. When the silver oxide work function was used, we found that the current–voltage characteristics of the device simulated using COMSOL Multiphysics were closer to the experimental results, strengthening the hypothesis of dielectric formation at the interface. Finally, we introduced a vertical power diode structure that is not known to date.

Fabrication and Characterization of Flexible Ag/ZnO Schottky Diodes on Polyimide Substrates

Analysis of the Electrical Characteristics of the Ag/ZnO Schottky Barrier Diodes on F-doped SnO2 Glass Substrates by Pulsed Laser Deposition

Influence of Illumination Intensity on the Electrical Characteristics and Photoresponsivity of the Ag/ZnO Schottky Diodes

High-Performance Thin-Film IGZO Schottky Diodes with Sputtered PdOₓ Anode

Density Functional Theory-Based Study of Ag/ZnO Schottky Diode

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity

Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Letter: Solution-Processed Flexible Zinc-Tin Oxide Thin-Film Transistors on Ultra-Thin Polyimide Substrates

Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

Crystalline Structure Effect on the Performance of Flexible ZnO/polyimide Surface Acoustic Wave Devices

Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase-Separated Insulating Layer.

Preparation of ZnO Thin Film Schottky Barrier Diode

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes with Silicon Dioxide Passivation Layer

Noble-Metal-Free, Polarity-Switchable IGZO Schottky Barrier Diodes

Enhanced Photoresponse of Nanostructured ZnO-based Flexible Photodetectors

Fabrication and Characteristics of ZnO Thin Films with an Al/Si (100) Substrates