Abstract:Based on the embedded atom method (EAM) and molecular dynamics (MD) method, the mono-crystalline copper with different defects is investigated through tension and nanoindentation simulation. The single-crystal copper nanowire with surface defects is firstly studied through tension. For validation, the tension simulations for nanowire without defect are carried out under different temperatures and strain rates. The defects on nanowires are then systematically studied in considering different defects orientation distribution. It is found that the Young’s modulus is insensitive of surface defects and centro-plane defects. However, the yield strength and yield point show a significant decrease due to the different defects. Specially, the 〖45〗^° defect in surface and in (200) plane exerts the biggest influence to the yield strength, about 34.20% and 51.45% decrease are observed, respectively. Different defects are observed to serve as a dislocation source and different necking positions of the nanowires during tension are found. During nanoindentation simulation, dislocation is found nucleating below the contact area, but no obvious dislocation is generated around the nano-cavity. Comparing with the perfect substrate during nanoindentation, the substrate with nano-cavities emerged less dislocations, it is supposed that the nano-cavity absorbed part of the indent energy, and less plastic deformation happened in the defected substrate.

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Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Synchrotron X‐ray Diffraction Studies of Large Sapphire Crystal Grown by Kyropoulos‐like Method

Dependence of Material Removal on Crystal Orientation of Sapphire under Cross Scratching

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire

High Strain Gradient Plasticity Associated with Wedge Indentation into Face-Centered Cubic Single Crystals: Geometrically Necessary Dislocation Densities

Crystallisation surface microtopography of [1120]- Direction growth sapphire crystal

X-ray Topographic Observation of Dislocation Structure in Sapphire Single Crystal Grown by Temperature Gradient Technique

Crystal Defects in Gan on (0001) Sapphire

Growth, Defects, Mechanical and Optical Properties of Nd:GSAG and Nd:YSAG Laser Crystal

Study on the technology of large size sapphire single crystal growth by SAPMAC

Investigation of defect, mechanical, thermal properties and refractive index on an Er:LuYSGG mixed laser crystal

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

Effect of Sapphire Thermal Performance Anisotropy on Crystal Growth by SAPMAC Method

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Crystallisation surface microtopography of growth sapphire crystal