Abstract:Vertically aligned semiconductor nanowires (NWs) have many potential applications for NW-based technologies, ranging from solar cells to intracellular sensors. Aligned NWs can be fabricated by top-down etching of planar wafers or synthesized from the bottom up using the vapor-liquid-solid (VLS) mechanism to induce epitaxial growth on lattice-matched substrates. The VLS process permits the modulation of dopants along the NW growth axis, which if combined with dopant-dependent wet-chemical etching, can be used to encode precise morphology. However, the synthesis of vertical and linear NWs with complex morphology is nontrivial, requiring control over multiple interdependent aspects of the VLS process. Here, we demonstrate sub-10 nm morphology in ⟨111⟩ epitaxial silicon (Si) NWs grown by the VLS mechanism on (111) Si substrates with gold (Au) catalysts. Using silane (SiH4), phosphine (PH3), and hydrochloric acid (HCl) precursor gases at 480 °C, precise morphology is encoded through abrupt phosphorus (P) dopant transitions, which are found to be less than 5 nm in width. The results highlight three mechanistic attributes of the process. First, NW growth in the ⟨111⟩ direction is found to be unstable at high SiH4 partial pressures and growth rates unless using HCl, which stabilizes NW growth through chlorination of the NW sidewall. Second, aggregated Au deposited on the NW surface by the VLS catalyst is found to be immobile on the chlorinated surface and to impede selective wet-chemical etching by potassium hydroxide (KOH) solution, preventing the design of precise morphology. Third, the aggregation of Au is found to be strongly dependent on the SiH4 partial pressure and NW growth rate, and values exceeding ∼100 mTorr and ∼150 nm/min, respectively, are required to minimize Au and thereby enable selective wet-chemical etching. Under optimized growth conditions, we find that abrupt, complex, and arbitrary dopant profiles and morphologies can be encoded in vertical Si NWs, and we expect that a variety of electronic and photonic applications can be realized with these designed nanostructures.

Aligned Silicon Nanowires with Fine‐tunable Tilting Angles by Metal‐assisted Chemical Etching on Off‐cut Wafers

Precise Regulation of Tilt Angle of Si Nanostructures Via Metal-Assisted Chemical Etching

In Situ Nanoscale Refinement by Highly Controllable Etching of the (111) Silicon Crystal Plane and Its Influence on the Enhanced Electrical Property of A Silicon Nanowire

Controlling the Geometries of Si Nanowires Through Tunable Nanosphere Lithography.

Ordered Arrays Of Vertically Aligned [110] Silicon Nanowires By Suppressing The Crystallographically Preferred Etching Directions

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Controllable Light-Induced Conic Structures in Silicon Nanowire Arrays by Metal-Assisted Chemical Etching.

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Controllable Growth of Silicon Nanowire Arrays Fabricated by Two-Step Silver Catalyzed Chemical Etching

OS1503 Development of Highly Ordered Silicon Nanowire Array

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

Fabrication of antireflective silicon nanowires array

Developing controllable anisotropic wet etching to achieve silicon nanorods, nanopencils and nanocones for efficient photon trapping

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Wafer-level Site-Controlled Growth of Silicon Nanowires by Cu Pattern Dewetting

Extended Arrays of Vertically Aligned Sub-10 Nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching

Wafer-scale Fabrication of Silicon Nanowire Arrays with Controllable Dimensions

High-temperature Anisotropic Silicon-Etching Steered Synthesis of Horizontally Aligned Silicon-Based Zn(2)SiO(4) Nanowires.

Designing Morphology in Epitaxial Silicon Nanowires: The Role of Gold, Surface Chemistry, and Phosphorus Doping

A Simple and Low-Cost Chemical Etching Method for Controllable Fabrication of Large-Scale Kinked Silicon Nanowires