Ultralow electron mobility of an individual Cu-doped ZnO nanowire

Xiaokai Jia,Hongjun Xu,Jingyun Gao,Xiaoning Jia,Huichao Zhu,Dapeng Yu
DOI: https://doi.org/10.1002/pssa.201228531
2013-01-01
Abstract:In this work, we synthesized Cu-doped ZnO nanowires through a vapor-liquid-solid process. We investigated their composition and photoluminescence properties; and we found the Cu-doped ZnO nanowires have a c-axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C-shaped Cu-doped ZnO nanowire. The electrical studies reveal that the Cu-doped ZnO nanowire has n-type conductivity and ultralow electron mobility.
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