Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

Irradiated Damages of Femtosecond Laser in Two Different Monocrystalline Silicon Wafers

Effects of the Irradiation on Silicon by Femtosecond Laser of Various Energy Densities

Ultra-Short Pulsed Laser-Induced Damage in Inorganic Silicon Materials

Nanomechanical Properties of Single-Crystalline Silicon Wafer Irradiated by High-Energy Femtosecond Laser Pulses

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Research on Periodic Structures Aroused by Femtosecond Laser Irradiation on Single-Crystalline Silicon Wafer

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Surface Damage Morphology Investigations of Silicon under Millisecond Laser Irradiation

Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon under Femtosecond Laser Irradiation

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

The Damage Morphology of Momocrystal Silicon Irradiated by Continuous Wave Fiber Laser

Investigation of Wavelength Effects on Polycrystalline Silicon Damages Using Nanosecond Pulse Laser Irradiation

Microstructure Evolution And Ft-Ir Spectra Of Silicon Induced By Pulsed Laser Irradiation

Stress Damage Process of Silicon Wafer under Millisecond Laser Irradiation

The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-Crystalline Silicon

Irradiation Characteristics of Nanosecond Laser on Silicon under Vacuum Conditions

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser.

Evolution of Microstructures on Silicon Induced by Femtosecond Laser with Multiple Pulses

Effect of Different Ambient Atmospheres on the Damage Caused to Silicon by 1064-Nm Laser Pulses

Ultrafast Dynamics of Femtosecond Laser Irradiation of Silicon with Different Fluence