Abstract:Faceted interfaces are a typical key feature of the morphology of many microstructures generated from solid-state phase transformations. Interpretation, prediction and simulation of this faceted morphology remain a challenge, especially for systems where irrational orientation relationships (ORs) between two phases and irrational interface orientations (IOs) are preferred. In terms of structural singularities, this work suggests an integrated framework, which possibly encompasses all candidates of faceted interfaces. The structural singularities are identified from a matching pattern, a dislocation structure and/or a ledge structure. The resultant singular interfaces have discrete IOs, described with low-index g ’s (rational orientations) and/or Δ g ’s (either rational or irrational orientations). Various existing models are grouped according to their determined results regarding the OR and IO, and the links between the models are clarified in the integrated framework. Elimination of defect types as far as possible in a dominant singular interface often exerts a central restriction on the OR. An irrational IO is usually due to the elimination of dislocations in one direction, i.e., an O-line interface. Analytical methods using both three-dimensional and two-dimensional models for quantitative determinations of O-line interfaces are reviewed, and a detailed example showing the calculation for an irrational interface is given. The association between structural singularities and local energy minima is verified by atomistic calculations of interfacial energies in fcc/bcc alloys where it is found that the calculated equilibrium cross-sections are in a good agreement with observations from selected alloys.

Analysis and Modeling of Localized Faceting on 4H-Sic Epilayer Surfaces

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

Vicinal silicon surfaces: from step density wave to faceting

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers

Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Continuum Modeling of Surface Roughening in Heteroepitaxial Structures Based on Phase Field Theory

High-quality structures on 4H-SiC fabricated by femtosecond laser LIPSS and chemical etching

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Femtosecond Laser Nanostructuring on a 4H-Sic Surface by Tailoring the Induced Self-Assembled Nanogratings

Study of the deposition of nanopillar-patterned 4H-SiC by molecular dynamics simulation

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

Atomic Structure of High-Index Ge Surfaces Consisting of Periodic Nanoscale Facets

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Faceted interfaces: a key feature to quantitative understanding of transformation morphology