Abstract:High-performance In–Al–Zn–O (IAZO) films and thin film transistors (TFTs) were fabricated using RF magnetron sputtering. The influence of sputtering power (90–250 W) on the film properties and device performance was investigated. All the IAZO films were in the amorphous state both before and after annealing, with a decrease in surface roughness observed with the increase of sputtering power. The Hall mobility of the annealed IAZO films degraded as the sputtering power increased. The highest Hall mobility of 63.6 cm 2 / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula> and a proper carrier concentration of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3.22} \times {10}^{{14}}$ </tex-math></inline-formula> /cm 3 were obtained for the 90-W-deposited film. All the IAZO films exhibited high average visible transmittances (above 92%) and large optical bandgaps (4.10 ± 0.03 eV). The IAZO TFT prepared at 90 W had the best electrical properties with a high saturation mobility of 12.08 cm 2 / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula> , a high ON–OFF current ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${7.75} \times {10}^{{7}}$ </tex-math></inline-formula> , a low hysterisis of −0.19 V, and a low subthreshold swing (SS) of 0.55 V/dec.

Effects of sputtering power on the properties of Al-doped ZnO films deposited on amorphous silicon films substrate

Effects of DC Sputtering Power on the Properties of AZO Films Deposited at Room Temperature for CIGS Photovoltaics

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effects of deposition power and pressure on the crystallinity of Al-doped ZnO thin films at glass substrates by low temperature RF magnetron sputtering

Direct Current Sputtered Aluminum-Doped Zinc Oxide Films for Thin Crystalline Silicon Heterojunction Solar Cell

Effect of sputtering power on the microstructure and photelectric properties of Al doped ZnO thin films

Effect of Al-doped on Optics and Electricity of ZnO (ZnO∶Al) Thin Films

Effects of power on properties of ZnO thin films grown by radio frequency magnetron sputtering

Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature

The effects of RF power on crystal structure and electrical properties of aluminum-doped zinc oxide films prepared by RF magnetron sputtering technique

Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

Influence of sputtering power on photoelectrical properties of ZnO: Al thin films

Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering

Properties of ZnO:Al Thin Films Deposited by Co-Sputtering with Zn Target and Al-doped ZnO Target

Structural and Optoelectronic Properties of AZO Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

Structural and Optical Properties of Al-Doped Zno Films Coated by Rf Magnetron Sputtering

Effects of Sputtering Parameters on Photoelectric Properties of AZO Film for CZTS Solar Cell

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Study of ZnO:Al Films for Silicon Thin Film Solar Cells