Impact of cerium oxide's grain size for dielectric relaxation

Chun Zhao,Cezhou Zhao,Matthew C. Werner,Steve Taylor,Paul Raymond Chalker,Peter King

DOI: https://doi.org/10.1109/IPFA.2013.6599126

2013-01-01

Abstract:Cerium oxide (CeO2) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150 °C, 200 °C, 250 °C, 300 °C and 350 °C, respectively. CeO2 were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are governed by the deposition temperature and have been estimated using Scherrer analysis of the X-ray diffraction patterns. Strong frequency dispersion is found in the capacitance-voltage measurement. Normalized dielectric constant is quantitatively utilized to characterize the dielectric constant variation. The relationship extracted between grain size and dielectric relaxation for CeO2 suggests that tuning properties for improved frequency dispersion can be achieved by controlling grain size, hence, the strain at the nanoscale dimensions.