Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Quanliang Zhao,Dezhi Su,Maosheng Cao,Guangping He,Jiejian Di,Junjie Yuan,Dawei Wang

DOI: https://doi.org/10.1007/s10854-013-1279-y

2013-01-01

Journal of Materials Science Materials in Electronics

Abstract:Pb(Zr0.52Ti0.48)O3 (PZT) thick films, with thickness up to 4 μm, using PbTiO3 (PT) buffer layers were successfully prepared on silicon-based substrates by a sol–gel method. Thermal analysis (thermogravimetric–differential thermal analysis) of PT and PZT sols were used to determine the pyrolysis and annealing temperatures. X-ray diffraction results show that the PZT/PT composite thick films possess perovskite structure and the dominant crystalline orientation changes from (100) to (110) with increasing the film thickness. Furthermore, the composite thick films exhibit thickness-dependent ferroelectric and dielectric properties, i.e., the coercive field decreases while dielectric constant increases as the thickness increases. Theoretical analysis shows that the thickness-dependent electrical properties are mainly attributed to the low dielectric constant of PT buffer layer and the relaxation of internal stress in PZT films.