Abstract:Microwave plasma chemical vapor deposition (MPCVD) technology is an ideal way to prepare large size and high-quality single crystal diamonds. However, the complexity of MPCVD single crystal diamond growth and the diversity of crystal growth requirements make it difficult to optimize the growth process. To address this issue, a systematic design method for MPCVD single crystal diamond growth based on plasma diagnostic technology was proposed, using plasma imaging and spectral analysis to quantitatively diagnose microwave plasma. The physical coupling characteristics and quantitative relationship between pressure, microwave(MW) power, plasma properties, and substrate temperature were studied by using home-made MPCVD system. And the size of major axis, precursor group concentration and distribution, energy density, and other data of the plasma under different parameters were obtained. Based on experimental data, the growth process map of single crystal diamond was obtained. According to this map, we selected process parameters by growth temperature and growth area. Through experimental verification, it is shown that this map is usful for guiding prediction with parameter error of less than 5%. Simultaneously, based on the predicted map, growth of single crystal diamond under different plasma energy densitiesis studied. At lower power (2600 W), a higher energy density (148.5 W/cm(3)) was obtained, and the concentration of carbon containing precursors was higher than that of the other parameters, resulting in a higher growth rate (8.9 mu m/h). By this method system, effective plasma control and process optimization can be carried out meeting for different single crystal diamond growth.

Preparation of diamond films as an infrared optical material by high power microwave plasma CVD

[Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films]

Effect of Methane Concentration on the Performance of Diamond Films Prepared by MPCVD

High quality nanocrystalline diamond films grown by RF-HFCVD

THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS

Developments in Microwave Plasma Chemical Vapor Deposition Technology for Preparing High Quality Diamond Films

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

High-speed growth of high-quality polycrystalline diamond films by MPCVD

Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy

Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Microwave power and chamber pressure studies for single-crystalline diamond film growth using microwave plasma CVD

Diamond Films and Particles Growth in Hydrogen Microwave Plasma with Graphite Solid Precursor: Optical Emission Spectroscopy Study

Influence of O2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

In-situ Monitoring of PCVD Diamond Films Growth by Langmuir Probe and Optical Emission Spectroscopy

Enhanced Growth Of High Quality Single Crystal Diamond By Microwave Plasma Assisted Chemical Vapor Deposition At High Gas Pressures

Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities

A Study of Diamond-Like Carbon Thin Films Prepared by Microwave Plasma Chemical Vapour Deposition

Deposition of Microcrystalline Diamond Films in H2 Microwave Plasma with Graphite Powder As Hydrocarbon Precursor

Mechanical properties of high-crystalline diamond films grown via laser MPCVD