Epitaxial growth of single-domain graphene on hexagonal boron nitride

Wei Yang,Guorui Chen,Zhiwen Shi,Cheng-Cheng Liu,Lianchang Zhang,Guibai Xie,Meng Cheng,Duoming Wang,Rong Yang,Dongxia Shi,Kenji Watanabe,Takashi Taniguchi,Yugui Yao,Yuanbo Zhang,Guangyu Zhang
DOI: https://doi.org/10.1038/nmat3695
IF: 41.2
2013-01-01
Nature Materials
Abstract:The epitaxial growth of large-area single-domain graphene on hexagonal boron nitride by plasma-assisted deposition is now reported. New sets of Dirac points are produced as a result of a trigonal superlattice potential, while Dirac fermion physics near the original Dirac point remain unperturbed. This growth approach could enable band engineering in graphene through epitaxy on different substrates.
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