Preparation of Bi4Ti3O12 thin films by pulsed laser deposition at room temperature
Jianming Zeng,Miáo Zhang,Jianxia Gao,Lirong Zheng,Lianwei Wang,Chenglu Lin,Alain Pignolet,Christopher Curran,Dietrich Hesse
1999-01-01
Abstract:Bismuth titanate (Bi4Ti3O12) thin films were successfully deposited on 7.62 cm Pt/Ti/SiO2/Si(100) substrates by pulsed laser deposition (PLD) technique at room temperature. The microstructure and crystallinity of the annealed thin films appeared to depend on the annealed temperature and time. The prepared films, which were simply treated with a conventional thermal annealing (CTA) or rapid thermal annealing (RTA) process at a relatively high treatment temperature, exhibited a mixed phase structures consisted of Bi4Ti3O12 and Bi2O7. In contrast, the films, which were annealed by a combined method with conventional thermal annealing and rapid thermal annealing, showed a pure ferroelectric phase Bi4Ti3O12, and well-developed crystallinity. The homogeneity about thickness and stoichiometricity of the prepared Bi4Ti3O12 films were investigated by Rutherford backscattering spectrometry (RBS) and spreading resistance probe (SRP) technique. The results of transmission electron microscopy (TEM) and SRP experiments indicated that the prepared Bi4Ti3O12 thin films had dense, smooth surface morphology and clear, sharp interface as well.