Abstract:Robust, void-free Cu electrodeposition in high-aspect ratio features relies on careful tuning of electrolyte additives, concentrations, and electrochemical parameters for a given feature dimension or wafer pattern. Typically, Cu electrodeposition in electronics manufacturing of microscale or larger features (i.e., microvias, through-holes, and high-density interconnects) employs a CuSO 4 –H 2 SO 4 electrolyte containing millimolar levels of chloride and, at a minimum, micromolar levels of a polyether suppressor. Research and optimization efforts have largely focused on the relationship between electrolyte additives and growth morphology, with less attention given to the impact of supporting electrolyte. Accordingly, a computational study exploring the influence of supporting electrolyte on Cu electrodeposition in microvias is presented herein. The model builds upon prior experimental and computational research on localized Cu deposition by incorporating the full charge conservation equation with electroneutrality to describe potential variation in the presence of ionic gradients. In accord with experimental observations, simulations predict enhanced current localization to the microvia bottom as H 2 SO 4 concentration is decreased. This phenomenon derives from enhanced electromigration within recessed features that accompanies the decrease of conductivity with local metal ion depletion. This beneficial aspect of low acid electrolytes is also impacted by feature density, CuSO 4 concentration, and the extent of convective transport.

Behaviors of Chloride Ions in Methanesulfonic Acid Bath for Copper Electrodeposition of Through-Silicon-Via

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Effect of Chloride Ion on Through-Silicon Via Filling in Methanesulfonic Acid Copper Plating Bath

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Influence of Electroplating Current Density on Through Silicon Via Filling

Wetting Process of Copper Filling in Through Silicon Vias

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Linear Sweep Voltammetric Study on the Copper Electrodeposition of Though-Silicon-Vias

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Electrochemical Analysis of the Effect of Accelerator in Methanesulfonic Acid Bath for Copper Electrodeposition

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Study of internal stress on electroplating copper used in through silicon via filling

Simulating the Influence of Supporting Electrolyte Concentration on Copper Electrodeposition in Microvias