Abstract:Two ultraviolet InGaN/GaN light emitting diodes (LEDs) with and without InGaN underlying layer beneath the multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. Based on the photoluminescence excitation measurements, it was found that the Stokes shift of the sample with a 10-nm-thick In0.1Ga0.9N underlying layer was about 64 meV, which was smaller than that of the reference sample without InGaN underlying layer, indicating a reduced quantum-confined Stark effect (QCSE) due to the decrease of the piezoelectric polarization field in the MQWs. In addition, by fitting the photon energy dependence of carrier lifetime values, the radiative recombination lifetime of the sample with and without InGaN underlying layer were obtained about 1.22 and 1.58 ns at 10 K, respectively. The shorter carrier lifetime also confirmed that the QCSE in the MQWs was weakened after inserting the InGaN underlying layer. In addition, although the depth of carrier localization in the sample with InGaN underlying layer became smaller, the nonradiative recombination centers (NRCs) inside it decreased, and thus suppressed the nonradiative re-combination process significantly according to the electroluminescence measurement results. Compared to the reference sample, the efficiency droop behavior was delayed in the sample with InGaN underlying layer and the droop effect was also effectively alleviated. Therefore, the enhanced light-emission efficiency of ultraviolet InGaN/GaN MQW LEDs could be attributed to the decrease of QCSE and NRCs.

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Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

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Improved Light Extraction Efficiency of AlGaN Deep-Ultraviolet Light Emitting Diodes Combining Ag-nanodots/Al Reflective Electrode with Highly Transparent P-Type Layer.

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

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Light Extraction Efficiency Enhancement of GaN-based Blue LEDs Based on ITO/ InxO Ohmic Contacts with Microstructure Formed by Annealing in Oxygen.

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

Fabrication of AlGaN Nanorods with Different Al Compositions for Emission Enhancement in UV Range

Enhancement of Electron Collection and Light Trapping of Inclined GaN and AlGaN Nanowire Arrays

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer