Abstract:The UV detection technology in the solar-blind band urgently needs to make a substantial breakthrough, and the performance of the AlxGa1-xN detector is also continuously improved. Therefore, we propose a heterojunction AlxGa1-xN nanowire array photocathode assisted by external electric field. In order to solve the problem of insufficient electron collection capability of the nanowire array photocathode, the built-in electric field introduced by the heterojunction structure can promote the drift and diffusion of the carriers inside the nanowire to the top surface. The participation of external electric field-assisted methods also can make the photoelectrons escaping from the side of the nanowire change the flight trajectory to increase electron collection. Using the above concept to build a photo-emission and electron-collection model of AlxGa1-xN nanowire array photocathode with heterojunction Al composition, it is concluded that the GaN-Al0.27Ga0.73N heterojunction nanowires have the best quantum efficiency. In addition, when the external electric field is 2.5V/μm, the large-spacing heterojunction Al-component nanowire array with an incident angle of 30 ° can obtain an overall electron collection ratio of nearly 100%. This study can provide some theoretical support for the performance improvement of vacuum-type solar blind UV detectors based on the AlxGa1-xN nanowire array photocathode with heterojunction Al composition. The field-assisted heterojunction AlxGa1-xN nanowire array cathode are expected to be verified by the experimental results in the future.

Enhancement of Electron Collection and Light Trapping of Inclined GaN and AlGaN Nanowire Arrays

InGaN nanowire array photocathode with high electron harvesting capability

Effective light absorption by graded Al-component AlxGa1-xN nano-array photocathode with light trapping effect

Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field

Photoemission enhancement of InxGa1-xN nanowire array photocathode

Light Absorption of GaN Nanowire Array Cathode with Alkali Metal Nanoparticle Modified on the Surface

High-efficient ultraviolet (UV) photocathode using optimum radial shaped AlxGa1-xN nanostructure with assisted external electric field

3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement

Electronic properties of graded Ga 1‐x Al x N superlattice nanowires photocathode: First‐principles

Comprehensive study on the optical properties of graded Al component AlxGA1-xn nanostructures for UV photocathode

Modelling the photoemission characteristics of exponential structure Al x Ga 1-x N nanowire array cathode under internal/external field

Enhanced light absorption of GaN nanorods with different axial geometries

Theoretical study on photoemission performance of field assisted GaAs nanowire photocathode

Numerical investigation on the polarization-dependent light extraction of 275-nm AlGaN based nanowire with bowtie antenna array or passivation layer

Vertically aligned InGaN nanowire arrays on pyramid textured Si (1 0 0): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change

Theoretical study on 2D photoelectric emission of GaN nanorod array and nanocone array photocathode

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays