Abstract:The UV detection technology in the solar-blind band urgently needs to make a substantial breakthrough, and the performance of the AlxGa1-xN detector is also continuously improved. Therefore, we propose a heterojunction AlxGa1-xN nanowire array photocathode assisted by external electric field. In order to solve the problem of insufficient electron collection capability of the nanowire array photocathode, the built-in electric field introduced by the heterojunction structure can promote the drift and diffusion of the carriers inside the nanowire to the top surface. The participation of external electric field-assisted methods also can make the photoelectrons escaping from the side of the nanowire change the flight trajectory to increase electron collection. Using the above concept to build a photo-emission and electron-collection model of AlxGa1-xN nanowire array photocathode with heterojunction Al composition, it is concluded that the GaN-Al0.27Ga0.73N heterojunction nanowires have the best quantum efficiency. In addition, when the external electric field is 2.5V/μm, the large-spacing heterojunction Al-component nanowire array with an incident angle of 30 ° can obtain an overall electron collection ratio of nearly 100%. This study can provide some theoretical support for the performance improvement of vacuum-type solar blind UV detectors based on the AlxGa1-xN nanowire array photocathode with heterojunction Al composition. The field-assisted heterojunction AlxGa1-xN nanowire array cathode are expected to be verified by the experimental results in the future.

Theoretical study on 2D photoelectric emission of GaN nanorod array and nanocone array photocathode

Photoemission enhancement of InxGa1-xN nanowire array photocathode

Theoretical study on photoemission of two-dimensional variable-Al composition AlxGa1-xN nanorod array photocathode

Theoretical study on photoemission performance of field assisted GaAs nanowire photocathode

Enhanced light absorption of GaN nanorods with different axial geometries

Modelling the photoemission characteristics of exponential structure Al x Ga 1-x N nanowire array cathode under internal/external field

Theoretical study on optoelectronic properties of GaAs nanostructures

InGaN nanowire array photocathode with high electron harvesting capability

Theoretical exploration of quantum efficiency of Al x Ga 1 − x N monolayer photocathode with varying Al contents and ultra‐thin emission layer

Enhancement of Electron Collection and Light Trapping of Inclined GaN and AlGaN Nanowire Arrays

Research on reflection-mode InxGa1-xN thin film photocathode

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

Quantum efficiency enhancement in simulated nanostructured negative electron affinity GaAs photocathodes

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

High-efficient ultraviolet (UV) photocathode using optimum radial shaped AlxGa1-xN nanostructure with assisted external electric field

Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field

Numerical determination of field emission performance of GaN nanowire arrays

The quantum efficiency study of GaN nanorods

Quantum Efficiency Enhancement by Mie Resonance from GaAs Photocathodes Structured with Surface Nanopillar Arrays

UV–Vis–NIR broadband response of GaAs-based photocathode with multilayer graded-band cascade structure