Abstract:The UV detection technology in the solar-blind band urgently needs to make a substantial breakthrough, and the performance of the AlxGa1-xN detector is also continuously improved. Therefore, we propose a heterojunction AlxGa1-xN nanowire array photocathode assisted by external electric field. In order to solve the problem of insufficient electron collection capability of the nanowire array photocathode, the built-in electric field introduced by the heterojunction structure can promote the drift and diffusion of the carriers inside the nanowire to the top surface. The participation of external electric field-assisted methods also can make the photoelectrons escaping from the side of the nanowire change the flight trajectory to increase electron collection. Using the above concept to build a photo-emission and electron-collection model of AlxGa1-xN nanowire array photocathode with heterojunction Al composition, it is concluded that the GaN-Al0.27Ga0.73N heterojunction nanowires have the best quantum efficiency. In addition, when the external electric field is 2.5V/μm, the large-spacing heterojunction Al-component nanowire array with an incident angle of 30 ° can obtain an overall electron collection ratio of nearly 100%. This study can provide some theoretical support for the performance improvement of vacuum-type solar blind UV detectors based on the AlxGa1-xN nanowire array photocathode with heterojunction Al composition. The field-assisted heterojunction AlxGa1-xN nanowire array cathode are expected to be verified by the experimental results in the future.

Modelling the photoemission characteristics of exponential structure Al x Ga 1-x N nanowire array cathode under internal/external field

Theoretical study on photoemission performance of field assisted GaAs nanowire photocathode

Photoemission enhancement of InxGa1-xN nanowire array photocathode

Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field

Theoretical study on 2D photoelectric emission of GaN nanorod array and nanocone array photocathode

Enhancement of Electron Collection and Light Trapping of Inclined GaN and AlGaN Nanowire Arrays

Electronic properties of graded Ga 1‐x Al x N superlattice nanowires photocathode: First‐principles

High-efficient ultraviolet (UV) photocathode using optimum radial shaped AlxGa1-xN nanostructure with assisted external electric field

Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

Theoretical study on photoemission of two-dimensional variable-Al composition AlxGa1-xN nanorod array photocathode

InGaN nanowire array photocathode with high electron harvesting capability

Field Enhanced GaN Photocathode and a Proposed Implementation Method

Investigation of GaAlAs Photocathode with Nanostructures Sensitive to Narrow Band 532 Nm Wavelength

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode

Theoretical exploration of quantum efficiency of Al x Ga 1 − x N monolayer photocathode with varying Al contents and ultra‐thin emission layer

Comprehensive study on the optical properties of graded Al component AlxGA1-xn nanostructures for UV photocathode

Enhanced Photoemission Performance of an AlGaN Photocathode by a Superlattice Emission Layer

Modeling and calculation of field emission enhancement factor for carbon nanotubes array

Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change

Numerical determination of field emission performance of GaN nanowire arrays