Abstract:The UV detection technology in the solar-blind band urgently needs to make a substantial breakthrough, and the performance of the AlxGa1-xN detector is also continuously improved. Therefore, we propose a heterojunction AlxGa1-xN nanowire array photocathode assisted by external electric field. In order to solve the problem of insufficient electron collection capability of the nanowire array photocathode, the built-in electric field introduced by the heterojunction structure can promote the drift and diffusion of the carriers inside the nanowire to the top surface. The participation of external electric field-assisted methods also can make the photoelectrons escaping from the side of the nanowire change the flight trajectory to increase electron collection. Using the above concept to build a photo-emission and electron-collection model of AlxGa1-xN nanowire array photocathode with heterojunction Al composition, it is concluded that the GaN-Al0.27Ga0.73N heterojunction nanowires have the best quantum efficiency. In addition, when the external electric field is 2.5V/μm, the large-spacing heterojunction Al-component nanowire array with an incident angle of 30 ° can obtain an overall electron collection ratio of nearly 100%. This study can provide some theoretical support for the performance improvement of vacuum-type solar blind UV detectors based on the AlxGa1-xN nanowire array photocathode with heterojunction Al composition. The field-assisted heterojunction AlxGa1-xN nanowire array cathode are expected to be verified by the experimental results in the future.

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Modelling the photoemission characteristics of exponential structure Al x Ga 1-x N nanowire array cathode under internal/external field

Theoretical study on 2D photoelectric emission of GaN nanorod array and nanocone array photocathode

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Enhancement of Electron Collection and Light Trapping of Inclined GaN and AlGaN Nanowire Arrays

Numerical determination of field emission performance of GaN nanowire arrays

InGaN nanowire array photocathode with high electron harvesting capability

Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field

Photoemission enhancement of InxGa1-xN nanowire array photocathode

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

Theoretical study on optoelectronic properties of GaAs nanostructures

Theoretical study on photoemission of two-dimensional variable-Al composition AlxGa1-xN nanorod array photocathode

Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change

Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode

Theoretical study on the improvement of optoelectronic properties of Al_xGa_(1-x) As nanowires with variable Al content adsorbed by metal nanoparticles

Modeling and calculation of field emission enhancement factor for carbon nanotubes array

Calculation of the Enhancement Factor for the Individual Conductive Nanowire in Field Emission

High-efficient ultraviolet (UV) photocathode using optimum radial shaped AlxGa1-xN nanostructure with assisted external electric field

Comparative study on electronic properties of GaN nanowires by external electric field

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

Photo-enhanced Field Electron Emission of Cadmium Sulfide Nanowires