Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Yellow Luminescence of Polar and Nonpolar GaN Nanowires on R-Plane Sapphire by Metal Organic Chemical Vapor Deposition.

Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk.

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

C and Si Ion Implantation and the Origins of Yellow Luminescence in Gan

Mechanism of yellow luminescence in GaN at room temperature

The GaN yellow-luminescence-related surface state and its interaction with air

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

Study on GaN Nanostructures: Growth and the Suppression of the Yellow Emission

Crystal structure and optical properties of GaAs nanowires

Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Enhanced yellow luminescence of amorphous Ga 2 O 3 nanofibers with tunable crystallinity

First-principles Study of CN Point Defects on Sidewall Surface of [0 0 0 1]-Oriented GaN Nanowires

Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Role of Edge Dislocations in Enhancing the Yellow Luminescence of N-Type Gan