Abstract:GaTaO4:Cr3+,Yb3+ can produce broadband near‐infrared (NIR) light by aiding with efficient "S‐A‐S" energy transfer, and it presents the broad full width at half maximum of 300 nm, good thermal stability (90%@423 K), and excellent internal quantum efficiency/external quantum efficiency (95.5%/44.79%). The NIR phosphor‐converted light‐emitting diodes can be applied in the fields of the non‐destructive food detection, night vision, and vein display. The rapid development of near‐infrared (NIR) spectroscopy urgently requires the exploration of NIR‐emitting phosphors with excellent luminescence properties. Herein, GaTaO4:Cr3+,Yb3+ NIR phosphor with excellent luminescence properties is reported, which exhibits ultra‐broadband NIR emission with a full width at half maximum of 300 nm, good thermal stability of 90%@423 K, and most remarkably, high internal quantum efficiency of 95.5% and external quantum efficiency of 44.79%. Such outstanding luminescence properties mainly give the credit to the unique sandwiched structure of GaTaO4:Cr3+,Yb3+, in which layers of Yb3+ ions (activator) are sandwiched between layers of Cr3+ ions (sensitizer), and hence many stable and compact Cr–Yb pairs are formed, so that the energy can be rapidly transferred from Cr3+ to Yb3+, effectively activating the characteristic f–f transition of Yb3+ that is very stable and almost independent of the temperature, and at the same time, the non‐radiative transition of Cr3+ ions can be suppressed to a certain degree. The NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) are fabricated by combining GaTaO4:Cr3+,Yb3+ with blue LED chips, and the application potential is fully demonstrated by non‐destructive food detection, night vision, and vein display. The results provide novel prospects for the design of NIR‐emitting materials with desirable luminescent properties.

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