Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from N-Zno/i-zno/p-gan Heterojunction Light-Emitting Diodes Via Optimizing the Thickness of MgO Spacer Layer

W. Z. Liu,H. Y. Xu,L. X. Zhang,C. Zhang,J. G. Ma,J. N. Wang,Y. C. Liu

DOI: https://doi.org/10.1063/1.4757127

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.