Terahertz Transmission Characteristics Across the Phase Transition in VO2 Films Deposited on Si, Sapphire, and SiO2 Substrates

Qiwu Shi,Wanxia Huang,Jing Wu,Yaxin Zhang,Yuanjie Xu,Yang Zhang,Shen Qiao,Jiazhen Yan
DOI: https://doi.org/10.1063/1.4746701
IF: 2.877
2012-01-01
Journal of Applied Physics
Abstract:Vanadium dioxide (VO2) films were deposited on high-purity Si, sapphire, and SiO2 substrates by an organic sol-gel method. The effect of the substrate on the structure, morphology, and phase transition properties of the VO2 films was demonstrated. We proposed that the film-substrate interaction induced the differences in the fraction of the +4 valence state vanadium oxide phase, surface morphology, and grain size for the VO2 films. The VO2 film on the Si substrate exhibited a switching property of about 2 orders of change in electrical resistivity. By contrast, the VO2 films on the sapphire and SiO2 substrates exhibited a switching property of about 3 orders of change in resistivity. The THz transmission across the phase transition in the VO2 films was quite different in the transmission modulation ratio, the width, and the slope of the hysteresis loop. In particular, the VO2 films on the sapphire and SiO2 substrates have the same reduction in THz transmission by about 46% comparing with about 35% in the VO2 film on the Si substrate. Furthermore, the VO2 film on the SiO2 substrate exhibits the widest hysteresis loop with the steepest slope.
What problem does this paper attempt to address?