Study of the Grain Size Effects on Electrical Resistivity Model for Ultrathin (10-50 Nm) Cu Films

Wang Ning,Dong Gang,Yang Yin-Tang,Chen Bin,Wang Feng-Juan,Zhang Yan
DOI: https://doi.org/10.7498/aps.61.016802
IF: 0.906
2012-01-01
Acta Physica Sinica
Abstract:A relation between grain size and metal film is given by combining the Marom model with experiment data. Based on available theory model, taking into account the surface scattering, boundary scattering and grain size effect, an analytical resistivity model is presented for the 10-50 nm thick Cu films. In particular, within a range of 10-20 nm, the findings show that the proposed model with consideration of grain size effects is in good agreement with experimental results. Compared with Lim, Wang and Marom' models, the proposed method can reduce the relative standard deviations by 74.24%, 54.85% and 78.29%, respectively.
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