Abstract:Thermal transport by phonons in films with thicknesses of less than 10 nm is investigated in a soft system (Lennard-Jones argon) and a stiff system (Tersoff silicon) using two-dimensional lattice dynamics calculations and the Boltzmann transport equation. This approach uses a unit cell that spans the film thickness, which removes approximations related to the finite cross-plane dimension required in typical three-dimensional-based approaches. Molecular dynamics simulations are performed to obtain finite-temperature structures for the lattice dynamics calculations and to predict thermal conductivity benchmarks. Thermal conductivity decreases with decreasing film thickness until the thickness reaches four unit cells (2.1 nm) for argon and three unit cells (1.6 nm) for silicon. With a further decrease in film thickness, thermal conductivity plateaus in argon while it increases in silicon. This unexpected behavior, which we identify as a signature of phonon confinement, is a result of an increased contribution from low-frequency phonons, whose density of states increases as the film thickness decreases. Phonon mode-level analysis suggests that confinement effects emerge below thicknesses of ten unit cells (5.3 nm) for argon and six unit cells (3.2 nm) for silicon. Thermal conductivity predictions based on the bulk phonon properties combined with a boundary scattering model do not capture the low thickness behavior. To match the two-dimensional lattice dynamics and molecular dynamics predictions for larger thicknesses, the three-dimensional lattice dynamics calculations require a finite specularity parameter that in some cases approaches unity. These findings point to the challenges associated with interpreting experimental thermal conductivity measurements of ultrathin silicon films, where surface roughness and a native oxide layer impact phonon transport.

Thermal and electrical conduction in ultrathin metallic films: 7 nm down to sub-nanometer thickness.

Thermal and electrical conduction in 6.4 nm thin gold films.

Electron Scattering Across Grain Interface in Sub-5 Nm Extremely Confined Domains

Temperature Dependent Behavior of Thermal Conductivity of Sub-5 Nm Ir Film: Defect-electron Scattering Quantified by Residual Thermal Resistivity

Thermal and Electrical Conductivities of Polycrystalline Metallic Nanofilms Based on the Kinetic Theory

Size Effects on the Thermal Conductivity of Polycrystalline Platinum Nanofilms

Phonon Scattering and Internal Friction in Dielectric and Metallic Films at Low Temperatures

Phonon Softening and Weak Temperature-dependent Lorenz Number for Bio-supported Ultra-thin Ir Film

Effect of Grain-Boundary Scattering on the Thermal Conductivity of Nanocrystalline Metallic Films

A Model Of Size Effect On Thermal Conductivity For Thin Metallic Films

Thermal And Electrical Transport Characteristics Of Polycrystalline Gold Nanofilms

Phonon Confinement and Transport in Ultrathin Films

Influence of Grain Boundary Scattering on the Electrical and Thermal Conductivities of Polycrystalline Gold Nanofilms

Electron Transport and Bulk-Like Behavior of Wiedemann-Franz Law for Sub-7 Nm-Thin Iridium Films on Silkworm Silk

Raman Scattering Characterization of Transparent Thin Film for Thermal Conductivity Measurement

Evaluating size effects on the thermal conductivity and electron-phonon scattering rates of copper thin films for experimental validation of Matthiessen's rule

Experimental study of thermal and electrical properties of gold nanofilms at ultra low temperature

EXPERIMENTAL STUDY OF THERMAL AND ELECTRICAL PROPERTIES OF GOLD NANOFILMS

Prediction of Size Effect on Thermal Conductivity of Nanoscale Metallic Films

Size Effect Of Lattice Thermal Conductivity Across Nanoscale Thin Films By Molecular Dynamics Simulations

Giant near-field radiative heat transfer between ultrathin metallic films