Abstract:The manipulation of thermal transport is in increasing demand as heat transfer plays a critical role in a wide range of practical applications, such as efficient heat dissipation in nanoelectronics and heat conduction hindering in solid-state thermoelectrics. It is well established that the thermal transport in semiconductors and insulators (phonons) can be effectively modulated by structure engineering or materials processing. However, almost all the existing approaches involve altering the original atomic structure of materials, which would be hindered due to either irreversible structure change or limited tunability of thermal conductivity. Motivated by the inherent relationship between phonon behavior and interatomic electrostatic interaction, we comprehensively investigate the effect of external electric field, a widely used gating technique in modern electronics, on the lattice thermal conductivity (κ). Taking two-dimensional silicon (silicene) as a model, we demonstrate that by applying an electric field (Ez = 0.5 V Å-1) the κ of silicene can be reduced to a record low value of 0.091 W m-1 K-1, which is more than two orders of magnitude lower than that without an electric field (19.21 W m-1 K-1) and is even comparable to that of the best thermal insulation materials. Fundamental insights are gained from observing the electronic structures. With an electric field applied, due to the screened potential resulting from the redistributed charge density, the interactions between silicon atoms are renormalized, leading to phonon renormalization and the modulation of phonon anharmonicity through electron-phonon coupling. Our study paves the way for robustly tuning phonon transport in materials without altering the atomic structure, and would have significant impact on emerging applications, such as thermal management, nanoelectronics and thermoelectrics.

Electron Transport and Bulk-Like Behavior of Wiedemann-Franz Law for Sub-7 Nm-Thin Iridium Films on Silkworm Silk

Electron Scattering Across Grain Interface in Sub-5 Nm Extremely Confined Domains

Thermal and electrical conduction in ultrathin metallic films: 7 nm down to sub-nanometer thickness.

Promoted electron transport and sustained phonon transport by DNA down to 10 K

Phonon Softening and Weak Temperature-dependent Lorenz Number for Bio-supported Ultra-thin Ir Film

Thermal transport in single silkworm silks and the behavior under stretching

Breakdown of Wiedemann–Franz Law in Individual Suspended Polycrystalline Gold Nanofilms Down to 3 K

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs

Nanoscale Probing of Electron-Regulated Structural Transitions in Silk Proteins by Near-Field IR Imaging and Nano-Spectroscopy

Two-dimensional silk

In Situ Fabrication of Hierarchically Branched TiO 2 Nanostructures: Enhanced Performance in Photocatalytic H 2 Evolution and Li-Ion Batteries.

Observations of 3 Nm Silk Nanofibrils Exfoliated from Natural Silkworm Silk Fibers

Splash-Resistant and Light-Weight Silk-Sheathed Wires for Textile Electronics.

Electronic Transport Properties Of Ir-Decorated Graphene

External electric field driving the ultra-low thermal conductivity of silicene.

Nanoconfinement Controls Stiffness, Strength and Mechanical Toughness of Β-Sheet Crystals in Silk

Elastoplastic Deformation of Silk Micro- and Nanostructures.

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

Design and Fabrication of Silk Templated Electronic Yarns and Applications in Multifunctional Textiles

X‐ray Photoelectron Spectroscopic and Raman Analysis of Silk Fibroin–cu(ii) Films