Electron Scattering Across Grain Interface in Sub-5 Nm Extremely Confined Domains

Zhe Cheng,Zhi Xu,Shen Xu,Xinwei Wang

2014-01-01

Abstract:By studying the temperature-dependent behavior (300 K down to 43 K) of electron thermal conductivity () in a 3.2 nm-thin Ir film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by bulk Ir. At low temperatures below 50 K,  of the film has almost two orders of magnitude reduction from that of bulk Ir. The film has ∂/∂T>0 while bulk Ir has ∂/∂T <0. We introduce a unified thermal resistivity (=T/) to interpret this completely different ~T relation. Very excitingly, it is found that the film and bulk Ir share a very similar ~T trend while they have a different residual part (Θ0) at T0 K: 0~0 for bulk Ir, and 0=5.5 mK 2 /W for the film. The Ir film and bulk Ir have very close ∂Θ/∂T (75 to 290 K): 6.33×10 -3 mK/W for film and 7.62×10 -3 mK/W for bulk Ir. This strongly proves the same phonon-electron scattering in them. The residual thermal resistivity provides an unprecedented way to quantitatively evaluating defect-electron scattering (0) in heat conduction. The interfacial thermal conductance across the grain boundaries is found larger than that of the Al/Cu interface. Its value is proportional to temperature largely because of the electron’s specific heat. A unified interfacial thermal conductance is defined and firmly proves such relation. The electron reflection coefficient is found to be large (88%) and almost * Corresponding author. Email: xwang3@iastate.edu, Tel: 515-294-2085, Fax: 515-294-3261