Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering
Shengnan CHEN,Weihao LIN,Jianxun WANG,Chenlu SONG,Gaorong HAN
DOI: https://doi.org/10.3969/j.issn.1007-791X.2017.04.014
2017-01-01
Abstract:Titanium nitride ( TiN) has become a hot topic in recent years due to its unique physical, chemical, optical, electrical and mechanical properties.In the present work, a homogeneous and dense TiN thin film was deposited on 304 stainless steel substrates by using a cathodic ion sputtering method. The structure, optical and electrical properties of the thin film were studied by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, scanning probe microscopy, U-Vis spectrophotometer and infrared spectroscopy.The results show that the main phase of the film is TiN, which exhibits an orientation along the ( 111) plane, with a small amount of O impurities.The surface roughness Rq is about 21.21 nm, while the average thickness is about 0.896μm.The reflectivity in the middle-far infrared band exceeds 80%, and the calculated hemisphere emittance of the film is about 0.19. The ellipsometry results show that the extinction coefficient and the refractive index of TiN is rather similar as Ag, which makes the TiN film to serve as an excellent candidate for low-emission coating materials.