Abstract:THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmission, using free space propagation with THz carriers. This possibility relies on the availability of an effective, low-cost detector technology. THz detection by self-mixing can provide an effective amplitude demodulation of the incoming carrier, with antennas directly fabricated on the chip. In this case, the speed of the detectors represents a crucial point in the definition of the bandwidth whereby several GHz are indeed required by the communication systems. The self-mixing process is intrinsically very fast, since it depends on the non-linear interaction of the radiation with the majority carriers inside the semiconductor structure. In this paper, we evaluate analytically the time dependence of the onset of the rectified voltage. A potential propagation along the detector channel follows the self-mixing rectification, accompanied by the charging of the parasitic capacitances of the structure. A numerical simulator can easily evaluate the delay due to this propagation along the structure, but the transient of the true origin of the signal, i.e., the establishment of the self-mixing voltage, at the current time, can be only inferred by analytical approach. In this work, we use the model developed for the THz rectification in the depletion region of an MOS capacitance to develop a transient model of the formation of the characteristic self-mixing charge dipole, and of the generation of the rectified potential. Subsequently, we show by TCAD simulations the propagation of the effect on the semiconductor structure, which surrounds the rectifying barrier, and evaluate the overall time response of a detector.

Probing and Modelling the Localized Self-Mixing in A Gan/Algan Field-Effect Terahertz Detector

Modeling an Antenna-Coupled Graphene Field-Effect Terahertz Detector

Room Temperature Gan/Algan Self-Mixing Terahertz Detector Enhanced by Resonant Antennas

Realization Of Resonant Plasmon Excitation And Detection

300 GHz Vector Imaging System Based on Self-Mixing Detection

Detection of Incoherent Terahertz Light Using Antenna-Coupled High-Electron-Mobility Field-Effect Transistors

High-Responsivity, Low-Noise, Room-Temperature, Self-Mixing Terahertz Detector Realized Using Floating Antennas on A Gan-Based Field-Effect Transistor

A Terahertz Detector Based on Algan/Gan High Electron Mobility Transistor with Bowtie Antennas

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

The Effect of Symmetry on Resonant and Nonresonant Photoresponses in a Field-Effect Terahertz Detector

Mapping an On-Chip Terahertz Antenna by a Scanning Near-Field Probe and a Fixed Field-Effect Transistor

Theoretical Analysis of the Time Transient of the THz Self-Mixing Rectification Voltage in a Semiconductor Barrier

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms

An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

Two-terminal Terahertz Detectors Based on AlGaN/GaN High-Electron-mobility Transistors

Optically Mutual-Injected Terahertz Quantum Cascade Lasers for Self-Mixing Velocity Measurements.

Enhancement of Terahertz Coupling Efficiency by Improved Antenna Design in GaN/AlGaN High Electron Mobility Transistor Detectors

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

The Origin of Distorted Intensity Pattern Sensed by a Lens and Antenna Coupled AlGaN/GaN-HEMT Terahertz Detector*

Resonant Tunneling Effect in Metal-Semiconductor-Metal Ultraviolet Detectors Grown with Algan/Gan Multi-Quantum-Well Interlayer

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor